FM120-M
MMBT2907AWT1
THRU
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
General Purpose Transistor
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted) (Continued)
•
Low profile surface mounted application in order to
Characteristic
Symbol
optimize board space.
ON CHARACTERISTICS
•
Low power loss, high efficiency.
current capability,
•
High
DC Current Gain(1)
low forward voltage drop.
h
FE
surge capability.
•
High
(I
C
=–0.1 mAdc, V
CE
=–10 Vdc)
•
Guardring
–1.0
overvoltage protection.
(I
C
=
for
mAdc, V
CE
= –10 Vdc)
high-speed switching.
•
Ultra
(I
C
= –10 mAdc, V
CE
= –10 Vdc)
•
Silicon
C
epitaxial planar
CE
= –10Vdc)
silicon junction.
(I = –150mAdc, V
chip, metal
parts meet environmental
•
Lead-free
–500mAdc, V =–10 Vdc)
standards of
(I
C
=
MIL-STD-19500 /228
CE
V
CE(sat)
product for packing code suffix "G"
•
RoHS
Collector–Emitter Saturation Voltage(1)
(I
C
free product for packing code
Halogen
= –150 mAdc, I
B
= –15 mAdc)
suffix "H"
(I
C
= –500 mAdc, I
B
=
Mechanical data
–50 mAdc)
SOD-123H
WILLAS
Pb Free Product
Features
Package outline
Min
0.146(3.7)
0.130(3.3)
Max
Unit
0.012(0.3) Typ.
––
75
100
100
100
50
––
––
––
––
––
––
––
––
––
–0.4
–1.6
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
Vdc
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
(I
C
= –150 mAdc, I
B
= –15mAdc)
:
•
Case
(I
Molded plastic, SOD-123H
)
C
= –500mAdc, I
B
= –50mAdc
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
•
•
•
Method 2026
Current–Gain — Bandwidth Product(4)
Polarity : Indicated by cathode band
(I
C
= –50mAdc, V
CE
= 20Vdc, f = 100MHz)
Mounting Position : Any
Output Capacitance
Weight : Approximated
= 0, f =
gram
(V
CB
= –10 Vdc, I
E
0.011
1.0 MHz)
Input Capacitance
Base–Emitter Saturation Voltage(1)
V
BE(sat)
Vdc
–1.3
–2.6
0.031(0.8) Typ.
SMALL–SIGNAL CHARACTERISTICS
ina
f
T
Dimensions in inches and (millimeters)
MHz
200
––
C
––
8.0
30
pF
pF
obo
(V
EB
= –2.0Vdc, I
C
= 0, f = 1.0 MHz)
Ratings at 25℃ ambient temperature unless otherwise specified.
t
on
—
45
d
Delay Time
I
C
= –150 mAdc, I
B1
= –15
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
ns
t
—
10
FM1150-MH FM1200-MH
UNIT
SYMBOL
FM120-M
H
mAdc)
RATINGS
Rise Time
t
r
—
40
Marking Code
12
13
14
15
16
18
10
115
120
Storage Time
(V
CC
= –6.0 Vdc,
20
t
s
—
80
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
Fall Time
I
C
= –150 mAdc,I
B1
= I
B2
= 15 mAdc)
t
f
—
30
ns
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Turn–Off Time
t
off
—
100
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
V
DC
1. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
Amps
Maximum Average Forward Rectified Current
I
O
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
30
I
FSM
Amps
superimposed on rated load (JEDEC method)
SWITCHING CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
Turn–On Time
load, derate current by 20%
(V
CC
= –30 Vdc,
Pr
el
im
C
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ibo
––
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
I
R
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
