FM120-M
THRU
MMBT2907AWT1
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY
Transistor
General Purpose
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
WILLAS
Pb Free Product
Features
Package outline
SOD-123H
PNP Silicon
•
Low profile surface mounted application in order to
optimize board space.
better reverse leakage current and thermal resistance.
•
Low power loss, high efficiency.
High current
•
FEATURE
capability, low forward voltage drop.
High surge capability.
•
We declare that the material of product compliance with RoHS requirements.
Guardring for overvoltage protection.
•
Pb-Free package is available
•
Ultra high-speed switching.
RoHS product for packing code suffix ”G”
•
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet
for packing
standards
“H”
•
Halogen free product
environmental
code suffix
of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
ORDERING INFORMATION
Halogen free product for packing code suffix "H"
r
Device
Marking
Mechanical data
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Shipping
SOT–323
0.040(1.0)
0.024(0.6)
ry
0.031(0.8) Typ.
MMBT2907AWT1
20
3000/Tape&Reel
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
3
COLLECTOR
0.031(0.8) Typ.
Method 2026
MAXIMUM RATINGS
•
Polarity : Indicated by cathode band
Rating
Symbol
•
Mounting Position : Any
Collector–Emitter Voltage
V
•
Weight : Approximated 0.011 gram
CEO
Collector–Base Voltage
V
CBO
ina
Value
– 60
Unit
Vdc
– 60
Vdc
mAdc
12
Symbol
20
P
D
14
20
θJA
R
13
30
21
30
14
Max
40
150
28
40
833
15
Unit
50
mW
35
50
°C/W
16
60
42
60
Dimensions in inches and (millimeters)
1
BASE
2
EMITTER
Marking Code
Pr
el
THERMAL CHARACTERISTICS
RATINGS
Maximum Recurrent Peak Reverse Voltage
im
– 5.0
Emitter–Base Voltage
V
EBO
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Current — Continuous
I
C
– 600
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Vdc
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
Total Device Dissipation FR– 5 Board, (1)
Maximum RMS
= 25°C
V
RMS
T
A
Voltage
Maximum DC Blocking Voltage
Thermal Resistance, Junction to Ambient
V
DC
Maximum Average Forward Rectified Current
Junction and Storage Temperature
Characteristic
18
80
56
80
1.0
30
40
120
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
I
O
T
J
, T
stg
–55 to +150
°C
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
DEVICE MARKING
I
FSM
Amp
Typical Thermal Resistance (Note 2)
MMBT2907AWT1
=20
Typical Junction Capacitance (Note 1)
Operating Temperature Range
R
ΘJA
C
J
T
J
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise
+125
-55 to
noted.)
TSTG
-55 to +150
℃/W
PF
℃
℃
Max
-
65
to +175
Unit
Storage Temperature Range
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Collector–Emitter Breakdown Voltage(2)
Maximum Forward Voltage at 1.0A DC
(I
C
= – 10 mAdc, I
B
=
at
Maximum Average Reverse Current
0)
@T A=25℃
Collector–Emitter Breakdown Voltage
@T A=125℃
Rated DC Blocking Voltage
V
F
I
R
V
(BR)CEO
–60
0.50
—
0.70
Vdc
0.5
10
Vdc
0.85
0.9
0.92
Volts
mAmp
NOTES:
(I
C
= – 10 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= –10µAdc, I
C
= 0)
V
V
(BR)CBO
–60
–5.0
—
—
—
—
– 50
– 50
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
(BR)EBO
Vdc
nAdc
nAdc
2- Thermal Resistance From Junction to Ambient
Base Cutoff Current
( V
CE
= –30Vdc, V
EB(OFF)
= –0.5Vdc )
Collector Cutoff Current
( V
CE
= –30Vdc, V
EB(OFF)
= –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
I
BL
I
CEX
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
