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MMBT2222ADW1T1 参数 Datasheet PDF下载

MMBT2222ADW1T1图片预览
型号: MMBT2222ADW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双路通用晶体管 [Dual General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 347 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
MMBT2222ADW1T1
THRU
Dual General Purpose Transistors
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
Low profile surface mounted application in order to
Mechanical data
.054(1.35)
.045(1.15)
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
.087(2.20)
Silicon epitaxial planar chip, metal silicon junction.
.071(1.80)
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT–363
.004(0.10)MIN.
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.096(2.45)
.071(1.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
.030(0.75)
Mounting Position : Any
.021(0.55)
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.010(0.25)
.003(0.08)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
.056(1.40)
Ratings at 25℃ ambient temperature unless otherwise specified.
.047(1.20)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
 
.004(0.10)MAX.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
.043(1.10)
.032(0.80)
I
O
 
.016(0.40)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
 
Amps
.004(0.10)
R
ΘJA
C
J
T
J
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
 
 
-55 to +125
 
-55 to +150
℃/W
PF
 
-
65
to +175
 
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
 
CHARACTERISTICS
SYMBOL
FM120-MH
and (millimeters)
Dimensions in inches
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
I
R
0.50
0.70
0.85
0.9
0.92
 
Volts
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
2012-
0
WILLAS ELECTRONIC CORP.