WILLAS
Dual General Purpose Transistors
•
Batch process design, excellent power dissipation offers
1000
better reverse leakage current and thermal resistance.
700
•
Low profile surface mounted application in order to
optimize board space.
500
•
Low power loss, high efficiency.
300
•
High current capability, low forward voltage drop.
200
•
High surge capability.
•
Guardring for overvoltage protection.
100
•
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
•
70
50
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
30
RoHS product for packing code suffix "G"
•
20
Halogen free product for packing code suffix "H"
FM120-M
MMBT2222ADW1T1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
Package outline
SOD-123H
hFE , DC CURRENT GAIN
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
10
0.1
0.2
0.3
•
Epoxy : UL94-V0 rated flame retardant
I
C
, COLLECTOR CURRENT (mA)
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
,
Figure 1. DC Current Gain
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.5 0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
70
100
200
300
0.040(1.0)
0.024(0.6)
500 700 1.0
k
0.031(0.8) Typ.
•
1.0
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
0.8
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
0.6
Ratings at 25℃ ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Single phase half wave, 60Hz, resistive of inductive load.
0.4
For capacitive load, derate current by 20%
RATINGS
0.2
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
12
20
13
30
14
40
15
50
35
2.0
50
16
60
18
80
10
100
115
150
120
200
Volts
Volts
Volts
Amps
0.005
0.01
0.02 0.03
0.05
V
RMS
0.1
V
DC
I
O
0.2
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
14
21
28
0.3
0.5
1.0
20
30
40
I
B
, BASE CURRENT (mA)
3.0
42
60
5.0
1.0
30
56
80
10
70
20
100
30
105
150
50
140
200
Figure 2. Collector Saturation Region
I
FSM
Amps
200
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
100
Typical Junction Capacitance (Note 1)
70
Operating Temperature Range
50
t, TIME (ns)
Storage Temperature Range
20
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
10
7.0
Rated DC Blocking Voltage
5.0
t, TIME (ns)
30
I
C
/I
B
= 10
R
ΘJA
T = 25°C
J
C
J
t
r
@ V
CC
= 30 V
J
T
t
d
@ V
EB(off)
= 2.0 V
TSTG
t
d
@ V
EB(off)
= 0
500
200
-55 to +125
300
40
t′
s
= t
s
- 1/8 t
f
120
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
-55 to +150
J
= 25°C
℃/W
PF
℃
100
-
65
to +175
℃
70
t
f
50
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Volts
0.9
0.92
30
V
F
0.50
0.70
0.85
I
R
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
20
10
7.0
5.0
0.5
10
mAmps
NOTES:
3.0
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2.0
2- Thermal Resistance From Junction to Ambient
5.0 7.0
10
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
5.0 7.0 10
20 30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
300
500
Figure 3. Turn–On Time
Figure 4. Turn–Off Time
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
