WILLAS
Dual General Purpose Transistors
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
SMALL–SIGNAL CHARACTERISTICS
optimize board space.
•
Low power loss, high efficiency.
Current–Gain – Bandwidth Product (Note 3)
(I
C
•
High current capability,
f
low forward voltage drop.
= 20 mAdc, V
CE
= 20 Vdc, = 100 MHz)
•
High surge capability.
Output Capacitance
•
Guardring for overvoltage protection.
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
•
Ultra high-speed switching.
Input
•
Silicon epitaxial planar chip, metal silicon junction.
Capacitance
(V
EB
Lead-free
I
parts meet environmental standards of
•
= 0.5 Vdc,
C
= 0, f = 1.0 MHz)
MIL-STD-19500 /228
Input Impedance
packing
•
RoHS product for
10 Vdc, f
code suffix "G"
= 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
=
(I =
Halogen free product for
f = 1.0 kHz)
suffix "H"
10 mAdc, V = 10 Vdc,
packing code
C
FM120-M
MMBT2222ADW1T1
THRU
FM1200-M
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Features
Package outline
SOD-123H
f
T
C
obo
C
ibo
h
ie
300
0.130(3.3)
–
–
0.146(3.7)
–
8.0
25
0.012(0.3) Typ.
MHz
pF
0.071(1.8)
0.056(1.4)
pF
Voltage Feedback Ratio
(I
C
•
Epoxy : UL94-V0 rated flame retardant
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
•
Case : Molded plastic, SOD-123H
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
terminals, solderable per MIL-STD-750
•
Terminals :Plated
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Method 2026
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
•
Polarity : Indicated by cathode band
Output Admittance
(I
C
•
Mounting
V
CE
= 10
: Any
f = 1.0 kHz)
= 1.0 mAdc,
Position
Vdc,
(I
C
•
Weight : Approximated
f
0.011
kHz)
= 10 mAdc, V
CE
= 10 Vdc, = 1.0
gram
Collector Base Time Constant
MAXIMUM RATINGS AND
(I
E
= 20 mAdc, V
CB
= 20 Vdc, f = 31.8 MHz)
,
Mechanical data
CE
2.0
0.25
–
–
50
75
5.0
25
–
–
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
kΩ
h
re
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
X 10
–4
0.031(0.8) Typ.
h
fe
–
Dimensions in inches and (millimeters)
h
oe
mmhos
ELECTRICAL CHARACTERISTICS
rb, C
c
NF
ps
dB
Ratings
Figure
ambient temperature unless otherwise specified.
Noise
at 25℃
Single phase
mAdc,
V
CE
= 10 Vdc, R
S
= 1.0
inductive load.
(I
C
= 100
half wave, 60Hz, resistive of
kΩ, f = 1.0 kHz)
For capacitive load, derate current by 20%
SWITCHING CHARACTERISTICS
Delay Time
RATINGS
Marking Code
Rise Time
Maximum Recurrent Peak Reverse Voltage
Storage Time
Maximum RMS Voltage
Maximum DC Blocking Voltage
Fall Time
(V
CC
= 30 Vdc, V
BE(off)
= –0.5 Vdc,
0.5
12
13
14
I
C
= 150 mAdc, I
B1
= 15 mAdc)
20
30
40
V
RRM
14
21
V
30 Vdc, I
C
= 150 mAdc,
(V
CC
=
RMS
I
B1
= I
B2
= 15 mAdc)
20
30
V
DC
I
FSM
28
40
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
t
d
15
50
t
r
35
t
s
50
t
f
16
60
42
60
1.0
30
–
–
–
–
18
80
56
80
10
10
25
100
ns
115
150
105
ns
150
120
200
140
200
Volts
Volts
Volts
Amps
225
70
60
100
Maximum Average Forward Rectified
which |h
fe
| extrapolates to unity.
I
O
3. f
T
is defined as the frequency at
Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
