WILLAS
Power
MOUNT SCHOTTKY
mAmps, 50 Volts
1.0A SURFACE
MOSFET
130
BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
power dissipation offers
•
Batch process design, excellent
TYPICAL ELECTRICAL CHARACTERISTICS
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
9
•
Low power loss,
=
high
V
efficiency.
VGS 4.5
•
High current capability, low forward voltage drop.
8
150°C
•
High surge capability.
•
Guardring for overvoltage protection.
7
•
Ultra high-speed switching.
6
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
25°C
MIL-STD-19500 /228
5
•
RoHS product for packing code suffix "G"
Halogen
4
free product for packing code suffix "H"
D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS)
FM120-M
THRU
BSS84LT1
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
D DS(on) , DDAIN-TO-SOUDCE DESISTANCE (OHMS)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
0.031(0.8) Typ.
VGS = 10 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
25°C
Mechanical data
•
2
•
Case : Molded plastic, SOD-123H
0
0.1
0.2
0.3
0.4
0.5
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
I , DDAIN CUDDENT (AMPS)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight :
2
Approximated 0.011 gram
DDS(on) , DDAIN-TO-SOUDCE DESISTANCE
(NODMALIZED)
1.8
3
Epoxy : UL94-V0 rated flame retardant
-55°C
0.040(1.0)
0.024(0.6)
-55°C
0.6
0.6
2
0
0.1
0.2
0.3
0.031(0.8) Typ.
0.5
0.4
Figure 3. On–Resistance versus Drain Current
Method 2026
D
ID, DDAIN CUDDENT (AMPS)
Figure 4. On–Resistance versus Drain Current
Dimensions in inches and (millimeters)
VDS = 40 V
7
TJ = 25°C
VGS = 10 V
MAXIMUM RATINGS AND ELECTRICAL
A
CHARACTERISTICS
ID = 0.52
6
Ratings at 25℃
1.6
ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
1.4
For capacitive load, derate current by 20%
Marking Code
VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS)
8
5
4
1.2
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
ID = 0.13 A
VGS = 4.5 V
13
30
21
30
1
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
12
20
14
0.8
14
3
40
2
28
40
1
15
50
35
50
16
60
18
ID = 0.5 A
10
80
100
56
80
70
115
150
105
150
120
200
140
Volts
Volts
Volts
Amps
Amps
℃/W
PF
℃
℃
42
60
20
100
200
0.6
Maximum Average Forward Rectified Current
-55
-5
45
95
145
0
0
Peak Forward Surge Current 8.3 ms single half sine-wave
TJ, JUNCTION TEMPEDATUDE (°C)
superimposed on rated load (JEDEC method)
1.0
500
1500
1000
QT, TOTAL GATE CHADGE (pC)
30
2000
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
Figure 5. On–Resistance Variation with Temperature
R
ΘJA
C
J
T
J
TSTG
Figure 6. Gate Charge
40
120
Typical Junction Capacitance (Note 1)
1
I D , DIODE CUDDENT (AMPS)
-55 to +125
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.1
T = 150°C
25°C
-55°C
SYMBOL
J
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
I
R
0.50
0.70
0.85
0.9
0.92
Volts
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
mAmps
NOTES:
0.01
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FODWAD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
