WILLAS
Power MOSFET
130
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
mAmps, 50 Volts
FM120-M
BSS84LT1
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
P–Channel SOT–23
•
High current capability, low forward voltage drop.
High surge capability.
•
These miniature surface mount MOSFETs reduce power loss
conserve energy, making
protection.
•
Guardring for overvoltage
this device ideal for use in small power
•
Ultra high-speed switching.
management circuitry. Typical applications are dc–dc converters, load
•
Silicon epitaxial
management in portable
switching, power
planar chip, metal silicon junction.
and battery–powered
•
Lead-free parts
computers, printers, cellular
products such as
meet environmental standards of
and cordless telephones.
MIL-STD-19500 /228
•
•
Energy Efficient
RoHS product for packing code suffix "G"
•
Miniature SOT–23
for packing code suffix "H"
Halogen free product
Surface Mount Package Saves Board Space
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
Mechanical data
available
Pb-Free package is
Epoxy UL94-V0 rated flame
code suffix ”G”
•
RoHS
:
product for packing
retardant
Case : Molded
product for packing code suffix “H”
•
Halogen free
plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
SOT –23
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011
3 Drain
gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
-
Single phase half wave, 60Hz, resistive of inductive load.
1
For capacitive load, derate
Gate
current by 20%
RATINGS
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
2
Maximum Recurrent Peak Reverse Voltage
Source
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
Marking Diagram
115
18
10
80
56
80
100
70
150
105
150
120
200
140
200
Volts
Volts
Volts
Amps
PD
100
M
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Operating Temperature Range
Symbol
R
ΘJA
V
DSS
C
J
T
V
GS
J
TSTG
Value
50
Unit
V
dc
-55
±
20
to +125
V
dc
40
120
PD = Device Code
M = Month Code
-55 to +150
℃/W
PF
℃
℃
Storage Temperature Range
Drain Current
– Continuous @ T
A
= 25°C
– Pulsed Drain Current (t
p
≤
10
µs)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A
@ T = 25°C
Total Power Dissipation
DC
A
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Range
Operating and Storage Temperature
@T A=125℃
I
D
130
I
DM
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
520
SYMBOL
ORDERING INFORMATION
Volts
0.9
0.92
V
F
0.50
0.70
0.85
P
D
225
mW
Device
Package
Shipping
0.5
R
mAmps
T
I
J
, T
stg
– 55 to
°C
BSS84LT1
SOT-23
3000/Tape&Reel
10
150
R
θJA
T
L
556
260
°C/W
°C
mA
-
65
to +175
NOTES:
Thermal Resistance – Junction–to–Ambient
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From
10 seconds
Purposes, for
Junction to Ambient
Maximum Lead Temperature for Soldering
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
