WILLAS
Power MOSFET
130
mAmps, 50 Volts
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Characteristic
•
Batch process design, excellent power dissipation offers
FM120-M
THRU
BSS84LT1
FM1200-M
Pb Free Product
Typ
–
0.146(3.7)
0.130(3.3)
Features
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Package
Symbol
outline
Min
50
Max
–
Unit
Vdc
µAdc
SOD-123H
better reverse leakage
OFF CHARACTERISTICS
current and thermal resistance.
•
Low profile surface mounted application in order to
Drain–to–Source Breakdown Voltage
optimize board space.
(VGS = 0
loss, high efficiency.
•
Low power
Vdc, ID = 250
µAdc)
High current capability, low forward voltage drop.
•
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS =
•
High surge capability.
0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
•
Guardring for overvoltage protection.
(VDS = 50 Vdc, VGS = 0 Vdc,
•
Ultra high-speed switching.
TJ = 125°C)
ON CHARACTERISTICS
(Note 1.)
MIL-STD-19500 /228
RoHS product for packing code
•
Gate–Source Threaded Voltage
suffix "G"
(VDS = VGS, ID = 1.0
packing
Halogen free product for
mAdc)
code suffix "H"
V(BR)DSS
IDSS
0.012(0.3) Typ.
–
–
–
–
0.8
–
50
–
–
–
–
–
5.0
–
0.1
15
60
0.071(1.8)
±10
2.0
10
0.056(1.4)
Silicon epitaxial planar chip, metal
20 Vdc, VDS = 0
•
Gate–Body Leakage Current (VGS =
±
silicon junction.
Vdc)
•
Lead-free parts meet environmental standards of
IGSS
VGS(th)
rDS(on)
|yfs|
nAdc
Vdc
Ohms
Mechanical data
Static Drain–to–Source On–Resistance
•
Case :
Admittance
•
Transfer
Molded plastic, SOD-123H
,
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
•
Terminals :Plated terminals, solderable per MIL-STD-750
DYNAMIC CHARACTERISTICS
Method 2026
(VGS = 5.0 Vdc, D = 100 mAdc)
Epoxy : UL94-V0
I
rated flame retardant
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
–
mS
0.031(0.8) Typ.
•
Input Capacitance
by cathode band
Polarity : Indicated
Mounting Position
•
Output Capacitance
: Any
•
Transfer Capacitance
Weight : Approximated 0.011 gram
SWITCHING CHARACTERISTICS
(Note 2.)
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
30
–
Dimensions
–
inches and (millimeters)
in
Coss
Crss
td(on)
tr
td(off)
14
40
15
QT
50
pF
–
–
–
–
–
16
–
60
42
60
10
5.0
2.5
1.0
16
18
6000
80
56
80
–
–
–
–
–
10
–
100
115
pC
120
150
200
105
150
Turn–On Delay Time
Ratings at 25℃ ambient temperature unless otherwise specified.
Rise
half
(V
load.
15
2.5
Single phase
Time
wave, 60Hz, resistive of inductive
DD = –15 Vdc, ID = –2.5 Adc,
RL = 50
Ω)
For capacitive load, derate current by 20%
Turn–Off Delay Time
Fall Time
Marking Code
Charge
Gate
RATINGS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ns
tf
–
8.0
–
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
12
20
13
30
Volts
Volts
Volts
Amps
V
RRM
SOURCE–DRAIN DIODE CHARACTERISTICS
14
21
28
Maximum RMS Voltage
V
RMS
Continuous Current
Maximum DC Blocking Voltage
20
30
40
V
DC
Pulsed Current
Maximum Average Forward Rectified Current
I
O
Forward Voltage (Note 2.)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
≤
2%.
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
FSM
superimposed on rated load (JEDEC method)
2. Switching characteristics are independent of operating junction temperature.
Typical Thermal Resistance (Note 2)
R
ΘJA
Maximum Recurrent Peak Reverse Voltage
Typical Junction Capacitance (Note 1)
Operating Temperature Range
0.6
35
IS
50
ISM
–
–
1.0
–
30
–
–
2.5
70
0.130
100
0.520
A
140
200
VSD
–
V
Amps
℃/W
PF
℃
VDS = 10 V
Storage Temperature Range
I D , DDAIN CUDDENT (AMPS)
I D , DDAIN CUDDENT (AMPS)
0.5
CHARACTERISTICS
40
TYPICAL ELECTRICAL CHARACTERISTICS
120
C
J
-55 to +125
0.5
T
J
25°C
-
65
to +175
TSTG
TJ = 25°C
0.45
-55 to +150
VGS = 3.5 V
3.25 V
℃
-55°C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
0.4
Maximum Forward Voltage at 1.0A DC
0.4
Maximum Average Reverse Current at @T A=25℃
150°C
0.3
Rated DC Blocking Voltage
@T A=125℃
I
R
0.35
0.50
0.3
0.2
0.1
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
3.0 V
2.75 V
2.5 V
2.25 V
0.25
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.2
0.1
0.15
2- Thermal Resistance From Junction to Ambient
0.05
1
1.5
2
2.5
3
3.5
4
0
0
1
2
3
4
5
6
7
8
0
9
10
VGS, GATE-TO-SOUDCE VOLTAGE (VOLTS)
VDS, DDAIN-TO-SOUDCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
