mAmps, 50
Power MOSFET 200
BARRIER RECTIFIERS
Volts
1.0A SURFACE MOUNT SCHOTTKY
-20V- 200V
SOD-123
PACKAGE
dissipation offers
•
Batch process design, excellent power
TYPICAL ELECTRICAL CHARACTERISTICS
WILLAS
FM120-M
BSS138WT1
THRU
FM1200-M
Pb Free Product
Features
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
Package outline
SOD-123H
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
10
optimize board space.
VGS = 2.5 V
•
Low power loss, high efficiency.
9
•
High current capability, low forward voltage drop.
8
•
High surge capability.
150°C
7
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
6
•
Silicon epitaxial planar chip, metal silicon junction.
5
•
Lead-free parts meet environmental standards of
25°C
MIL-STD-19500 /228
4
•
RoHS product for packing code suffix "G"
-55°C
Halogen free product for packing code suffix "H"
3
8
7
6
5
4
3
2
1
VGS = 2.75 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
25°C
-55°C
0.2
0.25
Mechanical data
2
•
Epoxy :
1
UL94-V0 rated flame retardant
0.05
0.15
0.25
0
0.1
0.2
•
Case : Molded plastic, SOD-123H
,
ID, DRAIN CURRENT (AMPS)
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Figure 6. On–Resistance versus Drain Current
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
0.05
0.1
0.15
ID, DRAIN CURRENT (AMPS)
0.031(0.8) Typ.
Figure 7. On–Resistance versus Drain Current
Dimensions in inches and (millimeters)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
•
Polarity : Indicated by cathode band
6
•
Mounting Position : Any
VGS = 4.5 V
5.5
•
Weight : Approximated 0.011 gram
5
4.5
4
VGS = 10 V
150°C
150°C
3.5
4.5
Ratings at 25℃ ambient temperature unless otherwise specified.
4
Single phase half wave, 60Hz, resistive of inductive load.
3
3.5
derate current by 20%
For capacitive load,
2.5
25°C
3
25°C
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
Marking Code
2.5
12
13
14
2
15
16
18
10
115
120
20
-55°C
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
2
-55°C
1.5
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
1.5
Maximum DC Blocking Voltage
1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
V
DC
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35
Maximum Average Forward Rectified Current
I
O
ID, DRAIN CURRENT (AMPS)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
20
0.4
30
0.45 0.5
40
1
0
50
0.05
60
80
100
0.1 0.15 0.2 0.25 0.3 0.35
1.0
ID, DRAIN CURRENT (AMPS)
30
150
200
0.4 0.45 0.5
Volts
Amps
Amps
℃/W
PF
℃
℃
Figure 8. On–Resistance
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
versus Drain Current
R
ΘJA
C
J
T
J
TSTG
Figure 9. On–Resistance versus Drain Current
1
-55 to +125
120
100
40
120
-55 to +150
-
65
to +175
I D , DIODE CURRENT (AMPS)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
0.1
TJ =
CHARACTERISTICS
150°C
25°C
-55°C
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
Volts
0.9
0.92
V
F
0.50
80
0.70
0.85
I
R
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
60
40
20
0.5
10
Ciss
mAmps
NOTES:
0.01
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Coss
Crss
0
5
10
15
20
25
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
