mAmps, 50 Volts
Power MOSFET 200
BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application
(TA
order to
unless otherwise noted)
ELECTRICAL CHARACTERISTICS
in
= 25°C
optimize board space.
Characteristic
•
Low power loss, high efficiency.
OFF CHARACTERISTICS
•
High current capability, low forward voltage drop.
•
High surge capability.
Drain–to–Source Breakdown Voltage
•
Guardring for overvoltage
µAdc)
(V
GS
= 0 Vdc, I
D
= 250
protection.
•
Ultra high-speed switching.
Zero Gate Voltage Drain Current
•
Silicon epitaxial planar
=
chip, metal silicon junction.
(V
DS
= 25 Vdc, V
GS
0 Vdc)
•
Lead-free parts meet environmental standards of
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
MIL-STD-19500 /228
Gate–Source Leakage
code suffix "G"
•
RoHS product for packing
Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
Halogen free product for packing code suffix "H"
ON CHARACTERISTICS
(Note 1.)
WILLAS
FM120-M
BSS138WT1
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Symbol
V
(BR)DSS
I
DSS
Min
0.146(3.7)
0.130(3.3)
Typ
–
Max
0.012(0.3) Typ.
Unit
Vdc
µAdc
50
–
0.071(1.8)
0.056(1.4)
–
–
–
0.5
–
–
–
–
0.1
0.5
±0.1
1.5
I
GSS
V
GS(th)
µAdc
Vdc
Ohms
•
Epoxy
DS
= V
GS
, I
D
rated
mAdc)
retardant
(V
: UL94-V0
= 1.0
flame
•
Case : Molded plastic, SOD-123H
Static Drain–to–Source On–Resistance
(V
GS
= 2.75 Vdc, I
D
< 200
solderable per MIL-STD-750 ,
•
Terminals :Plated terminals,
mAdc, T
A
= –40°C to +85°C)
•
•
•
Mechanical data
Voltage
Gate–Source Threshold
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
DS(on)
r
0.031(0.8) Typ.
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
Method 2026
Forward Transconductance
Polarity : Indicated by cathode band
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
Mounting Position : Any
DYNAMIC CHARACTERISTICS
Weight : Approximated 0.011 gram
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
Input Capacitance
–
–
5.6
–
10
3.5
–
g
fs
–
Dimensions in
100
inches and (millimeters)
mmhos
C
iss
–
–
40
12
50
25
pF
MAXIMUM RATINGS
Output Capacitance
AND ELECTRICAL
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
CHARACTERISTICS
oss
C
Ratings at 25℃ ambient temperature unless otherwise
= 25 Vdc, V
GS
= 0, f = 1 MHz)
Transfer Capacitance
(V
DG
specified.
C
rss
–
3.5
5.0
Single phase half wave, 60Hz, resistive of inductive load.
SWITCHING CHARACTERISTICS
(Note 2.)
For capacitive load, derate current by 20%
ns
Turn–On Delay Time
t
d(on)
–
–
20
SYMBOL
FM120-M
H
D
= 0.2 Adc,)
RATINGS
(V
DD
= 30 Vdc, I
FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Turn–Off Delay Time
t
–
–
20
Marking Code
12
13
14
15
d(off)
16
18
10
115
120
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
V
RRM
2. Switching characteristics are independent of operating junction temperature.
Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
20
30
40
50
60
1.0
30
80
100
150
200
Volts
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amps
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃/W
PF
℃
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
