Power MOSFET 200 mAmps, 50 Volts
Features
WILLAS
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
BSS138WT1
THRU
FM1200-M
Pb Free Product
Package outline
SOD-123H
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Typical applications are dc–dc converters, power management in
•
Guardring for overvoltage protection.
Ultra high-speed switching.
•
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
makes it ideal for low
Low Threshold Voltage (V
GS(th)
: 0.5V...1.5V)
MIL-STD-19500 /228
voltage applications
•
RoHS product for packing code suffix "G"
Miniature SOT–323 Surface Mount Package saves board space
Halogen free product for packing code suffix "H"
N–Channel SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
3
•
1
2
•
Epoxy : UL94-V0 rated
packing code suffix ”G”
RoHS product for
flame retardant
•
Case : Molded plastic, SOD-123H
Halogen free product for packing code suffix “H”
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
•
Mechanical data
available
•
Pb-Free package is
SOT–323
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
ORDERING INFORMATION
•
Weight : Approximated 0.011 gram
Device
Marking
Shipping
BSS138WT1
J1
3000 Tape & Reel
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Dimensions in inches and (millimeters)
Drain
3
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
Gate
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
V
RRM
V
RMS
12
20
14
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
115
100
2
Source
150
70
105
100
150
120
200
140
200
Volts
Volts
Volts
Amps
Maximum
MAXIMUM
Voltage
DC Blocking
RATINGS (T
A
= 25
o
C unless otherwise noted)
20
30
V
DC
Maximum Average Forward Rectified Current
I
O
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Rating
Drain–to–Source Voltage
Symbol
I
FSM
V
DSS
Value
50
±
20
Unit
Vdc
Vdc
Amps
℃/W
PF
℃
℃
Gate–to–Source Voltage
Typical Thermal Resistance (Note 2)
– Continuous
Typical Junction Capacitance (Note 1)
Drain Current
R
ΘJA
V
GS
C
J
T
J
– Continuous @
Operating Temperature Range
TA = 25°C
CHARACTERISTICS
Operating and Storage Temperature
Maximum Forward Voltage at 1.0A DC
Range
Rated DC Blocking Voltage
Total Power Dissipation @ TA = 25°C
P
D
T
J,
T
stg
V
F
150
– 55 to
150
556
260
mW
°C
0.50
0.70
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
M
– Pulsed Drain Current (tp
≤
10
µs)
Storage Temperature Range
I
TSTG
DM
I
D
mA
-55
200
to +125
800
Marking Diagram
40
120
-
65
to +175
-55 to +150
J1
Maximum Average Reverse Current at @T A=25℃
Thermal Resistance – Junction–to–Ambient
I
R
R
θJA
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
@T A=125℃
°C/W
°C
NOTES:
T
L
0.85
0.5
J1 = Device Code
M = Month Code
10
0.9
0.92
Volts
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
