WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
PACKAGE
Features
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
8
7
6
5
4
3
2
1
0
0.05
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
profile surface mounted application in order to
•
Low
10
optimize
VGS = 2.5 V
board space.
9
•
Low power loss, high efficiency.
8
•
High current capability, low forward voltage drop.
150°C
•
High surge capability.
7
•
Guardring for overvoltage protection.
6
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
5
•
Lead-free parts meet environmental standards of
25°C
4
MIL-STD-19500 /228
•
RoHS
3
product for packing code suffix "G"
-55°C
Halogen free product for packing code suffix "H"
2
Mechanical data
1
•
Epoxy : UL94-V0 rated flame retardant
0.05
0.15
0
0.1
0.2
•
Case : Molded plastic,
I
SOD-123H
D, DRAIN CURRENT (AMPS)
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.25
VGS = 2.75 V
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
25°C
-55°C
0.1
0.15
0.040(1.0)
0.024(0.6)
0.2
0.25
0.031(0.8) Typ.
0.031(0.8) Typ.
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
Method 2026
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
4.5
4
Figure 7. On–Resistance versus Drain Current
Dimensions in inches and (millimeters)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
•
Polarity : Indicated by cathode band
6
•
Mounting
V
Position
V
: Any
GS = 4.5
5.5
•
Weight : Approximated 0.011 gram
5
4.5
MAXIMUM
150°C
VGS = 10 V
150°C
3.5
RATINGS AND ELECTRICAL CHARACTERISTICS
3
2.5
2
14
40
1.5
15
50
35
50
0.05 0.1
16
60
42
18
80
56
10
100
70
Ratings at 25℃ ambient temperature unless otherwise specified.
4
Single phase
3.5
wave, 60Hz, resistive of inductive load.
half
For capacitive load, derate current by 20%
3
25°C
Marking Code
25°C
115
150
-55°C
105
120
200
140
2.5
2
1.5
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
V
RMS
12
-55°C
20
14
13
30
21
Volts
Volts
Volts
Amps
Amps
℃/W
PF
℃
℃
1
Maximum DC Blocking Voltage
0
0.05
20
0.35 0.4 0.45
30
0.3
V
DC
0.5
Maximum Average Forward Rectified
, DRAIN CURRENT (AMPS)
Current
I
O
ID
Peak Forward Surge Current 8.3 ms single half sine-wave
I
Drain Current
Figure 8. On–Resistance versus
FSM
0.1
0.15
0.2
0.25
28
1
40
0
superimposed on rated load (JEDEC method)
60
100
150
0.15 0.2
80
0.25 0.3 0.35 0.4 0.45
200
0.5
1.0
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
30
40
120
Typical Thermal Resistance (Note 2)
Typical Junction
1
Capacitance (Note 1)
Operating Temperature Range
R
ΘJA
C
J
T
J
TSTG
-55 to +125
120
100
-55 to +150
-
65
to +175
I D , DIODE CURRENT (AMPS)
Storage Temperature Range
0.1
CHARACTERISTICS
TJ = 150°C
25°C
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
80
-55°C
V
F
I
R
0.50
0.70
0.85
0.9
0.92
Volts
@T A=125℃
60
40
20
1.0
1.2
0
Crss
0
5
0.5
NOTES:
0.01
Ciss
10
Coss
mAmps
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.001
0
0.2
0.4
0.6
0.8
10
15
20
25
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
