WILLAS
Power MOSFET 200 mAmps, 50 Volts
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
PACKAGE
TYPICAL ELECTRICAL CHARACTERISTICS
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
0.8
optimize board space.
VGS = 3.5
TJ 25°C
•
Low power
=
loss, high efficiency.
V
0.7
•
High current capability, low forward voltage drop.
VGS = 3.25 V
•
High surge capability.
0.6
•
Guardring for overvoltage protection.
VGS = 3.0 V
0.5
•
Ultra high-speed switching.
VGS =
•
Silicon epitaxial planar chip, metal silicon junction.
2.75 V
0.4
•
Lead-free parts meet environmental standards of
VGS = 2.5 V
MIL-STD-19500 /228
0.3
•
RoHS product for packing code suffix "G"
0.2
Halogen free product for packing code suffix "H"
I D , DRAIN CURRENT (AMPS)
FM120-M
THRU
BSS 8LT1
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.9
0.8
I D , DRAIN CURRENT (AMPS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VDS = 10 V
0.146(3.7)
0.130(3.3)
25°C
-55°C
0.012(0.3) Typ.
150°C
0.071(1.8)
0.056(1.4)
Mechanical data
0.1
•
Epoxy : UL94-V0 rated flame retardant
0
2
4
5
7
8
9
10
1
3
•
Case
0
: Molded plastic, SOD-123H
6
,
VDS
terminals, solderable per MIL-STD-750
•
Terminals :Plated
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0
0.5
1
1.5
2
2.5
3
0.031(0.8) Typ.
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
1.25
Figure 2. Transfer Characteristics
Dimensions in inches and (millimeters)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
2.2
•
Weight : Approximated 0.011 gram
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 1.0 mA
Ratings at 25℃ ambient temperature unless otherwise specified.
1.6
Single phase half wave, 60Hz, resistive of inductive load.
VGS = 4.5 V
For capacitive load, derate current by 20%
1.4
ID = 0.5 A
Marking Code
ID = 0.8 A
1.8
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.125
1
14
0.875
40
28
40
0.75
-55
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
1.2
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
1
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0.8
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
Volts
Volts
Volts
Amps
0.6
-55
-5
Maximum Average Forward Rectified Current
I
O
95
TJ, JUNCTION TEMPERATURE (°C)
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC method)
Figure 3. On–Resistance
45
145
-30
-5
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Variation with
Temperature
ΘJA
R
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10
8
6
C
J
T
J
VDS = 40 V
TSTG
TJ = 25°C
V
F
I
R
-55 to +125
Figure 4. Threshold Voltage Variation
with Temperature
40
120
45
95
20
70
1.0
TJ, JUNCTION TEMPERATURE (°C)
30
120
145
Amps
℃/W
PF
℃
℃
-
65
to +175
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
0.50
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
NOTES:
2- Thermal Resistance From Junction to Ambient
4
ID = 200 mA
2
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0
0
500
1000
1500
2000
2500
3000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
2012-06
WILLAS ELECTRONIC CORP.
2012-10
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
