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2SB1132 参数 Datasheet PDF下载

2SB1132图片预览
型号: 2SB1132
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 89塑封装晶体管 [SOT-89 Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 546 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号2SB1132的Datasheet PDF文件第1页浏览型号2SB1132的Datasheet PDF文件第2页  
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
2SB1132
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Outline Drawing
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.181(4.60)
Epoxy : UL94-V0 rated flame retardant
.173(4.39)
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
.063(1.60)
Dimensions in inches and (millimeters)
.061REF
Polarity : Indicated by cathode band
(1.55)REF
Mounting Position : Any
Weight : Approximated 0.011 gram
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
.167(4.25)
Maximum Recurrent Peak Reverse Voltage
.055(1.40)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
.154(3.91)
V
RRM
12
20
13
30
21
30
.102(2.60)
14
15
.091(2.30)
40
50
28
40
35
50
16
60
42
60
1.0
 
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
14
V
.023(0.58)
RMS
I
O
 
I
FSM
R
ΘJA
C
J
T
J
TSTG
V
20
V
DC
.016(0.40)
V
A
 
Peak Forward Surge Current 8.3 ms single half sine-wave
 
 
.047(1.2)
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
.031(0.8)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
A
 
 
-55 to +125
40
120
 
-55 to +150
 
-
65
to +175
 
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
 
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
.017(0.44)
.118TYP
@T A=25℃
(3.0)TYP
I
R
@T A=125℃
V
F
.197(0.52)
.013(0.32)
0.50
0.70
0.5
10
0.85
.014(0.35)
0.9
0.92
 
V
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP
Rev.C
2012-
0
WILLAS ELECTRONIC CORP.