SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
(mA)
EMITTER
•
Batch process design, excellent power dissipation offers
T =25
℃
h
FE
T
a
=100
℃
WILLAS
I
C
——
V
CE
Typical Characteristics
SOD-123
PACKAGE
h
FE
1000
FM120-M
2SB1132
THRU
FM1200-M
I
C
Features
-1000
Package outline
——
Pb Free Product
COMMON
-5mA
a
better reverse leakage current and thermal resistance.
-800
-4.5mA
•
Low profile surface mounted application in order to
-4mA
optimize board space.
-3.5mA
-600
•
Low power loss, high efficiency.
-3mA
•
High current capability, low forward voltage drop.
-2.5mA
-2mA
•
High surge capability.
-400
•
Guardring for overvoltage protection.
-1.5mA
•
Ultra high-speed switching.
-1mA
-200
•
Silicon epitaxial planar chip, metal silicon junction.
I
B
=-0.5mA
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
-0
-0
-4
-8
-12
-16
-20
RoHS product for packing code suffix "G"
•
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Halogen free product for packing code suffix "H"
COLLECTOR CURRENT
I
C
SOD-123H
DC CURRENT GAIN
T
a
=25
℃
100
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
COMMON EMITTER
V
CE
=-3V
10
-1
-10
-100
-1000
COLLECTOR CURRENT
I
C
(mA)
Mechanical data
V
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
CEsat
——
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-400
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
-100
-1000
V
BEsat
——
I
C
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
a
T
a
=25
℃
-750
•
Polarity : Indicated by cathode band
T =100
℃
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
T =25
℃
a
Dimensions in inches and (millimeters)
T
a
=100
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
β=10
-500
-1
-10
-100
-1000
Ratings at 25℃ ambient temperature unless otherwise specified.
β=10
-10
Single phase
-1
half wave, 60Hz, resistive of inductive load.
-10
-100
-1000
COLLECTOR CURRENT I
C
(mA)
For capacitive load, derate current by 20%
RATINGS
-1000
Marking Code
COLLECTOR CURRENT
I
C
(mA)
I
C
——
V
BE
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
f
T
——
I
C
(MHz)
Maximum Recurrent Peak Reverse Voltage
(mA)
V
RRM
V
RMS
V
DC
T =1
00
℃
a
12
20
14
13
30
21
300
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
115
150
105
150
120
200
140
Vo
Maximum RMS Voltage
Maximum DC Blocking Voltage
I
C
COLLECTOR CURRENT
42
60
1.0
30
40
120
Vo
T =2
5
℃
a
Maximum Average Forward Rectified Current
TRANSITION FREQUENCY
-100
20
30
100
80
100
200
Vo
I
O
I
FSM
R
ΘJA
C
J
COMMON
J
T
EMITTER
V
CE
=-6V
f
T
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
COMMON EMITTER
=-5V
V
-55 to +150
CE
T
a
=25
℃
-100
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-1
-0
-300
-600
-10
-1200
℃/
P
-55 to +125
10
-1
-
65
to +175
-10
℃
TSTG
℃
-900
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
BASE-EMMITER VOLTAGE V
BE
(mV)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
COLLECTOR CURRENT
I
C
(mA)
V
F
@T A=125℃
0.50
600
0.70
P
C
0.5
——
T
a
0.85
10
0.9
0.92
Vo
C
ob
/C
at @T
V
CB
/V
Maximum Average Reverse Current
ib
——
A=25℃
EB
Rated DC Blocking Voltage
100
I
R
COLLECTOR POWER DISSIPATION
P
C
(mW)
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
mA
NOTES:
(pF)
C
ib
500
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CAPACITANCE
C
ob
2- Thermal Resistance From Junction to Ambient
C
400
10
300
200
100
2012-06
1
-0.1
0
-1
-10
-20
0
25
50
WILLAS ELECTRONIC CORP.
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
