WILLAS
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
TRANSISTOR (PNP)
•
Batch process design, excellent power dissipation offers
better
FEATURES
reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
Low V
CE(sat)
•
Low power loss, high efficiency.
Pb-Free package is
low forward voltage drop.
•
High current capability,
available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MAXIMUM RATINGS
(T
a
=25
℃
unless otherwise noted)
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Symbol
Parameter
Value
Halogen free product for packing code suffix "H"
FM120-M
THRU
2SB1132
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOT-89
1.
BASE
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
2.
COLLECTOR
3.
EMITTER
1
2
3
0.071(1.8)
0.056(1.4)
Unit
V
V
V
,
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
V
CBO
Mechanical data
Collector-Base Voltage
-40
-32
-5
-2
500
150
-55~150
V
CEO
•
Epoxy : UL94-V0 rated
Voltage
Collector-Emitter
flame retardant
Emitter-Base Voltage
V
EBO
•
Case : Molded plastic, SOD-123H
I
C
I
CP
*
P
C
T
J
T
stg
Pulsed
Collector Current
Method 2026
0.031(0.8) Typ.
•
Terminals :Plated terminals, solderable per MIL-STD-750
A
Continuous
Collector Current
-1
•
Polarity : Indicated by cathode band
Collector Power Dissipation
•
Mounting Position : Any
Junction Temperature
•
Weight : Approximated 0.011 gram
Storage Temperature
,
A
mW
℃
Dimensions in inches and (millimeters)
℃
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
RATINGS
Marking Code
Parameter
Maximum Recurrent Peak Reverse Voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
Symbol
V
RRM
V
DC
I
O
Collector-base breakdown voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
12
13
14
Test conditions
20
30
40
15
50
35
50
16
60
42
60
18
Min
80
80
Typ
10
100
70
100
120
Max
115
Unit
150
105
150
200
200
Volt
V
V
RMS
(BR)CBO
V
(BR)CEO
V
(BR)EBO
R
CBO
ΘJA
I
FSM
I
14
C
=-50μA,I
E
=0
21
I
C
=-1mA,I
B
=0
I
E
=-50μA,I
C
=0
V
CB
=-20V,I
E
=0
20
30
28
40
-40
56
1.0
-5
30
40
120
V
140
V
V
Volt
Maximum Average Forward Rectified Current
Collector-emitter breakdown voltage
Volt
-32
Amp
Emitter-base breakdown voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Amp
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Collector cut-off current
Emitter cut-off current
DC current gain
I
-0.5
μA
μA
I
EBO
T
J
TSTG
C
J
V
EB
=-4V,I
to
=0
-55
C
+125
V
CE
=-3V,I
C
=-100mA
I
C
=-500mA,I
B
=-50mA
0.50
0.70
82
℃/W
-
65
to +175
-55 to +150
-0.5
PF
℃
h
FE
390
0.85
℃
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Collector-emitter saturation voltage
Transition frequency
@T A=125℃
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
CE(sat)
V
F
I
f
T
R
-0.2
150
20
-0.5
0.9
V
0.92
Volt
Maximum Average Reverse Current at @T A=25℃
V
CE
=-5V,I
C
=-50mA,f=30MHz
V
CB
=-10V,I
E
=0,f=1MHz
0.5
10
MHz
30
pF
mAm
Collector
NOTES:
output capacitance
C
ob
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
CLASSIFICATION OF h
FE
Rank
2- Thermal Resistance From Junction to Ambient
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
Range
Marking
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
