WCSN0436V1P
Write Cycle Description
[7, 8]
Function
Read
Write
−
No bytes written
Write Byte 0
−
(DQ
[7:0]
and DP
0
)
Write Byte 1
−
(DQ
[15:8]
and DP
1
)
Write Bytes 1, 0
Write Byte 2
−
(DQ
[23:16]
and DP
2
)
Write Bytes 2, 0
Write Bytes 2, 1
Write Bytes 2, 1, 0
Write Byte 3
−
(DQ
[31:24]
and DP
3
)
Write Bytes 3, 0
Write Bytes 3, 1
Write Bytes 3, 1, 0
Write Bytes 3, 2
Write Bytes 3, 2, 0
Write Bytes 3, 2, 1
Write All Bytes
WE
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
BWS
3
X
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
BWS
2
X
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
BWS
1
X
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
BWS
0
X
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................
−65°C
to +150°C
Ambient Temperature with
Power Applied..................................................
−55°C
to +125°C
Supply Voltage on V
DD
Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State
[9]
.....................................−0.5V
to V
DDQ
+ 0.5V
DC Input Voltage
[9]
..................................−0.5V
to V
DDQ
+ 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Range
Com’l
Ind’l
Ambient
Temperature
[10]
0°C to +70°C
3.3V ± 5%
–40°C to +85°C
V
DD
/V
DDQ
Notes:
7. X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW.
8. Write is initiated by the combination of WE and BWS
x
. Bytes written are determined by BWS
[3:0]
. Bytes not selected during byte writes remain unaltered. All
I/Os are three-stated during byte writes.
9. Minimum voltage equals –2.0V for pulse duration less than 20 ns.
10. T
A
is the case temperature.
Document #: 38-05246 Rev. **
Page 6 of 14
WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
