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WED3EG72M18S265JD3SG 参数 Datasheet PDF下载

WED3EG72M18S265JD3SG图片预览
型号: WED3EG72M18S265JD3SG
PDF下载: 下载PDF文件 查看货源
内容描述: 128MB - 16Mx72 DDR SDRAM UNBUFFERED [128MB - 16Mx72 DDR SDRAM UNBUFFERED]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 12 页 / 197 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3EG7218S-JD3  
White Electronic Designs  
PRELIMINARY  
DDR SDRAM COMPONENT ELECTRICAL CHARACTERISTICS AND  
RECOMMENDED AC OPERATING CONDITIONS  
DDR400: VCC = VCCQ = +2.6V ± 0.1V; DDR333, 266, 200: VCC = VCCQ = +2.5V ± 0.2V  
AC Characteristics  
403  
335  
262/265  
Min Max  
-0.70 +0.70 -0.70 +0.70 -0.75 +0.75 -0.75 +0.75  
202  
Parameter  
Symbol Min  
tAC  
tCH  
Max  
Min  
Max  
Min  
Max  
Units Notes  
Access window of DQs from CK, CK#  
CK high-level width  
CK low-level width  
ns  
0.45  
0.45  
5
0.55  
0.55  
7.5  
13  
0.45  
0.45  
0.55  
0.55  
0.45  
0.45  
0.55  
0.55  
0.45  
0.45  
0.55  
0.55  
tCK  
tCK  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
tCK  
ns  
16  
16  
tCL  
Clock cycle time  
CL=3  
tCK (3)  
22  
CL=2.5 tCK (2.5)  
6
6
13  
13  
7.5  
7.5  
13  
13  
7.5  
10  
13  
13  
22  
CL=2  
tCK (2)  
tDH  
7.5  
0.40  
0.40  
1.75  
13  
7.5  
22  
DQ and DM input hold time relative to DQS  
DQ and DM input setup time relative to DQS  
DQ and DM input pulse width (for each input)  
Access window of DQS from CK, CK#  
DQS input high pulse width  
0.45  
0.45  
1.75  
0.5  
0.5  
0.5  
1.75  
14,17  
14,17  
17  
tDS  
0.5  
tDIPW  
1.75  
tDQSCK -0.60 +0.60 -0.60 +0.60 -0.75 +0.75 -0.75 +0.75  
tDQSH  
tDQSL  
tDQSQ  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
0.35  
DQS input low pulse width  
DQS-DQ skew, DQS to last DQ valid, per group,  
per access  
0.40  
1.28  
0.45  
1.25  
0.5  
0.5  
13,14  
Write command to rst DQS latching transition  
DQS falling edge to CK rising - setup time  
DQS falling edge from CK rising - hold time  
Half clock period  
tDQSS  
tDSS  
tDSH  
tHP  
0.72  
0.2  
0.75  
0.2  
0.75  
0.2  
1.25  
0.75  
0.2  
1.25  
tCK  
tCK  
tCK  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
0.2  
0.2  
0.2  
0.2  
tCH, tCL  
tCH, tCL  
tCH, tCL  
tCH, tCL  
18  
8,19  
8,20  
6
Data-out high-impedance window from CK, CK#  
Data-out low-impedance window from CK, CK#  
tHZ  
+0.70  
+0.70  
+0.75  
+0.75  
tLZ  
-0.70  
0.60  
0.60  
0.60  
0.60  
2.2  
-0.70  
0.75  
0.75  
0.80  
0.80  
2.2  
-0.75  
0.90  
0.90  
1
-0.75  
0.90  
0.90  
1
Address and control input hold time (fast slew rate)  
Address and control input set-up time (fast slew rate)  
Address and control input hold time (slow slew rate)  
Address and control input setup time (slow slew rate)  
Address and control input pulse width (for each input)  
LOAD MODE REGISTER command cycle time  
tIHf  
tISf  
6
tIHs  
6
tISs  
1
1
6
tIPW  
tMRD  
2.2  
2.2  
10  
12  
15  
15  
DQ-DQS hold, DQS to rst DQ to go non-valid, per  
access  
tQH tHP-tQHS  
tHP-tQHS  
tHP-tQHS  
tHP-tQHS  
13,14  
15  
Data hold skew factor  
tQHS  
0.50  
0.55  
0.75  
0.75  
ns  
ACTIVE to PRECHARGE command  
ACTIVE to READ with Auto precharge command  
ACTIVE to ACTIVE/AUTO REFRESH command period  
AUTO REFRESH command period  
tRAS  
tRAP  
tRC  
40  
15  
55  
70  
70,000  
42  
15  
60  
72  
70,000  
40 120,000 45 120,000 ns  
15  
60  
75  
20  
65  
75  
ns  
ns  
ns  
tRFC  
21  
June 2006  
Rev. 2  
7
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com