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W3E32M72S-266BI 参数 Datasheet PDF下载

W3E32M72S-266BI图片预览
型号: W3E32M72S-266BI
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR SDRAM [32Mx72 DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 669 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3E32M72S-XBX  
White Electronic Designs  
device loses power. The enabling of the DLLshould always  
be followed by a LOAD MODE REGISTER command to the  
mode register (BA0/BA1 both LOW) to reset the DLL.  
COMMANDS  
The Truth Table provides a quick reference of available  
commands. This is followed by a written description of  
each command.  
TABLE 2 - CAS LATENCY  
DESELECT  
ALLOWABLE OPERATING  
FREQUENCY (MHz)  
The DESELECT function (CS# High) prevents new  
commands from being executed by the DDR SDRAM.  
The SDRAM is effectively deselected. Operations already  
in progress are not affected.  
CAS  
LATENCY = 2  
CAS  
LATENCY = 2.5  
SPEED  
-200  
-250  
-266  
-333  
75  
100  
100  
-
100  
125  
133  
166  
NO OPERATION (NOP)  
The NO OPERATION (NOP) command is used to perform  
a NOP to the selected DDR SDRAM (CS# is LOW while  
RAS#, CAS#, and WE# are high). This prevents unwanted  
commands from being registered during idle or wait states.  
Operations already in progress are not affected.  
The extended mode register must be loaded when all  
banks are idle and no bursts are in progress, and the  
controller must wait the specified time before initiating  
any subsequent operation. Violating either of these  
requirements could result in unspecified operation.  
LOAD MODE REGISTER  
The Mode Registers are loaded via inputs A0-12. The  
LOAD MODE REGISTER command can only be issued  
when all banks are idle, and a subsequent executable  
command cannot be issued until tMRD is met.  
OUTPUT DRIVE STRENGTH  
The normal full drive strength for all outputs are specified to  
be SSTL2, Class II. The DDR SDRAM supports an option  
for reduced drive. This option is intended for the support  
of the lighter load and/or point-to-point environments. The  
selection of the reduced drive strength will alter the DQs  
and DQSs from SSTL2, Class II drive strength to a reduced  
drive strength, which is approximately 54 percent of the  
SSTL2, Class II drive strength.  
ACTIVE  
The ACTIVE command is used to open (or activate) a  
row in a particular bank for a subsequent access. The  
value on the BA0, BA1 inputs selects the bank, and the  
address provided on inputsA0-12 selects the row. This row  
remains active (or open) for accesses until a PRECHARGE  
command is issued to that bank. A PRECHARGE  
command must be issued before opening a different row  
in the same bank.  
DLL ENABLE/DISABLE  
When the part is running without the DLL enabled, device  
functionality may be altered. The DLL must be enabled for  
normal operation. DLL enable is required during power-  
up initialization and upon returning to normal operation  
after having disabled the DLL for the purpose of debug or  
evaluation. (When the device exits self refresh mode, the  
DLLis enabled automatically.)Any time the DLLis enabled,  
200 clock cycles with CKE high must occur before a READ  
command can be issued.  
READ  
The READ command is used to initiate a burst read  
access to an active row. The value on the BA0, BA1 inputs  
selects the bank, and the address provided on inputsA0-9  
selects the starting column location. The value on input  
A10 determines whether or not AUTO PRECHARGE is  
used. If AUTO PRECHARGE is selected, the row being  
accessed will be precharged at the end of the READ burst;  
ifAUTO PRECHARGE is not selected, the row will remain  
open for subsequent accesses.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 2  
6
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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