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W3E32M72S-266BI 参数 Datasheet PDF下载

W3E32M72S-266BI图片预览
型号: W3E32M72S-266BI
PDF下载: 下载PDF文件 查看货源
内容描述: 32Mx72 DDR SDRAM [32Mx72 DDR SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 669 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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W3E32M72S-XBX  
White Electronic Designs  
after VCCQ to avoid device latch-up, which may cause  
permanent damage to the device. VREF can be applied any  
time after VCCQ but is expected to be nominally coincident  
with VTT. Except for CKE, inputs are not recognized as  
valid until after VREF is applied. CKE is an SSTL_2  
input but will detect an LVCMOS LOW level after VCC is  
applied. After CKE passes through VIH, it will transition to  
an SSTL_2 signal and remain as such until power is cycled.  
Maintaining an LVCMOS LOW level on CKE during power-  
up is required to ensure that the DQ and DQS outputs will  
be in the High-Z state, where they will remain until driven  
in normal operation (by a read access). After all power  
supply and reference voltages are stable, and the clock  
is stable, the DDR SDRAM requires a 200µs delay prior  
to applying an executable command.  
FIGURE 2 – FUNCTIONAL BLOCK DIAGRAM  
CS  
B
#
WEB  
#
RAS  
CAS  
B#  
B#  
CS# WE# RAS# CAS#  
VREF  
V
REF  
DQ  
0
DQ  
0
A0-12  
A
0-12  
=
Y
=
Y
Y
BA  
0
-1  
BA0-1  
=
Y
=
CK  
CK  
CKE  
0
CK  
CK#  
CKE  
DQML  
DQMH  
=
Y
=
Y
U0  
0
#
B
=
Y
=
Y
=
Y
=
Y
=
Y
=
Y
DM  
DM  
0
1
0
1
DQ15  
DQ15  
DQS  
DQS  
DQSL  
DQSH  
CS# WE# RAS# CAS#  
V
REF  
Once the 200µs delay has been satisfied, a DESELECT  
or NOP command should be applied, and CKE should  
be brought HIGH. Following the NOP command, a  
PRECHARGE ALL command should be applied. Next a  
LOAD MODE REGISTER command should be issued for  
the extended mode register (BA1 LOW and BA0 HIGH)  
to enable the DLL, followed by another LOAD MODE  
REGISTER command to the mode register (BA0/BA1  
both LOW) to reset the DLL and to program the operating  
parameters. Two-hundred clock cycles are required  
between the DLL reset and any READ command. A  
PRECHARGE ALL command should then be applied,  
placing the device in the all banks idle state.  
A
0-12  
DQ  
0
DQ16  
=
Y
=
Y
=
Y
BA0-1  
=
Y
CK  
CK  
CKE  
DM  
DM  
DQS  
DQS  
1
CK  
CK#  
CKE  
DQML  
DQMH  
DQSL  
DQSH  
=
Y
=
Y
U1  
1
#
B
=
Y
=
Y
=
=
Y
Y
=
=
Y
Y
2
3
2
3
DQ15  
DQ31  
CS# WE# RAS# CAS#  
V
REF  
DQ  
0
DQ32  
A
0-12  
=
=
Y
Y
BA0-1  
CK  
CK#  
=
Y
=
Y
CK  
2
=
Y
=
Y
U2  
CK  
2
#
=
Y
=
Y
CKE  
B
CKE  
=
=
Y
Y
=
=
Y
Y
DM  
DM  
DQS  
DQS  
4
5
DQML  
DQMH  
DQSL  
DQSH  
DQ15  
DQ47  
4
5
Once in the idle state, two AUTO REFRESH cycles must  
be performed (tRFC must be satisfied.)Additionally, a LOAD  
MODE REGISTER command for the mode register with  
the reset DLL bit deactivated (i.e., to program operating  
parameters without resetting the DLL) is required.  
Following these requirements, the DDR SDRAM is ready  
for normal operation.  
CS# WE# RAS# CAS#  
V
A
REF  
DQ  
0
DQ48  
0-12  
=
=
Y
Y
BA0-1  
CK  
CK#  
CKE  
DQML  
DQMH  
DQSL  
DQSH  
=
Y
=
Y
=
Y
CK  
CK  
CKE  
3
=
Y
U3  
=
Y
=
Y
3
#
=
=
Y
Y
B
=
=
Y
Y
DM  
DM  
DQS  
DQS  
6
7
6
7
DQ15  
DQ63  
CS# WE# RAS# CAS#  
V
A
REF  
DQ  
0
DQ64  
0-12  
=
=
Y
Y
BA0-1  
CK  
CK#  
CKE  
DQML  
DQMH  
=
Y
=
Y
CK  
CK  
CKE  
4
=
Y
=
Y
U4  
=
Y
4
#
B
Y
=
=
=
Y
Y
=
=
Y
Y
DM  
DM  
8
9
DQ15  
DQ79  
DQS  
DQS  
8
9
DQSL  
DQSH  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
March 2006  
Rev. 2  
4
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com  
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