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VG4632321AQ-5R 参数 Datasheet PDF下载

VG4632321AQ-5R图片预览
型号: VG4632321AQ-5R
PDF下载: 下载PDF文件 查看货源
内容描述: 524,288x32x2位CMOS同步图形RAM [524,288x32x2-Bit CMOS Synchronous Graphic RAM]
分类和应用:
文件页数/大小: 81 页 / 1954 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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Preliminary  
VG4632321A  
524,288x32x2-Bit  
CMOS Synchronous Graphic RAM  
VIS  
Figure 5. Self Refresh Entry & Exit Cycle  
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19  
CLK  
CKE  
* Note 2  
t
RC(min)  
* Note 7  
* Note 1  
* Note 4  
t
* Note 3  
PDE  
t
SRX  
t
* Note 5  
IS  
* Note 6  
CS  
RAS  
* Note 8  
* Note 8  
CAS  
BS  
A0 ~ A9  
WE  
DSF  
DQM  
DQ  
Hi-Z  
Hi-Z  
Self Refresh Enter  
Self Refresh Exit  
Auto Refresh  
Note: To Enter SelfRefresh Mode  
1. CS, RAS & CAS with CKE should be low at the same clock cycle.  
2. After 1 clock cycle, all the inputs including the system clock can be don’t care except for CKE.  
3. The device remains in SelfRefresh mode as long as CKE stays “low”.  
Once the device enters SelfRefresh mode, Minimum t  
is required before exit from SelfRefresh.  
RAS  
Note: To Exit SelfRefresh Mode  
4. System clock restart and be stable before returning CKE high.  
5. Enable CKE and CKE should be set high for minimum time of t  
6 .CS starts from high.  
.
SRX  
7. Minimum t is required after CKE going high to complete SelfRefresh exit.  
RC  
8. 1024 cycles of burst AutoRefresh is required before SelfRefresh entry and after SelfRefresh exit if the  
system uses burst refresh.  
Document:  
Rev.1  
Page5  
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