VG36644041DT / VG36648041DT / VG36641641DT
CMOS Synchronous Dynamic RAM
VIS
Ordering information
Part Number
Cycle time
6 ns (166MHz 3/3/3)
7 ns (143MHz 3/3/3)
7.5 ns (133MHz 3/3/3)
10 ns (100MHz 2/2/2)
Package
VG366440(80/16)41DT(L)-6
VG366440(80/16)41DT(L)-7
VG366440(80/16)41DT(L)-7L
VG366440(80/16)41DT(L)-8H
400mil, 54-Pin
Plastic TSOP
VG36648041DT(L)-7L
• VG : VIS Memory Product
• 36 : Technology/Design Rule
• 64 : 64Mb
• 80 : Device Configuration, 40:x4, 80: x8, 16: x16
• 4 : Device Infernal Banks
• 1 : Interface Type, 1: LVTTL
• D : Mask/Design Version
• T : Package Type, T: TSOP
• L : None: normal version; L:low power version
• 7L : Cycle time; -6 grade is available only on 4M X16 option
Packaging Information
• 400mil, 54-Pin Plastic TSOP
RAD R1
MILLIMETERS
INCHES
NOM.
---
DIM
RAD R
MIN.
---
NOM.
---
MAX.
1.20
0.15
1.05
0.45
0.40
0.21
0.16
MIN.
---
MAX.
0.047
0.006
0.041
0.018
0.016
0.008
0.006
0.880
54
28
A
A1
A2
b
A2
0.05
0.95
0.30
0.30
0.12
0.12
22.09
---
0.002
0.037
0.012
0.012
0.005
0.005
0.870
---
B
B
c
1.00
---
0.039
---
---
b1
c
---
L
A1
E1
0¢X~8¢X
---
---
DETAIL A
b
---
c1
D
---
22.22
0.71 REF.
0.80 BASIC
11.76
10.16
0.50
---
22.35
0.875
ZD
0.028 REF.
e
0.0315 BASIC
SECTION B-B
b1
E
11.56
10.03
0.40
11.96
10.29
0.60
0.25
---
0.455
0.463
0.400
0.020
---
0.471
0.405
0.024
0.010
---
1
27
D
E1
L
0.395
0.016
0.005
0.005
c
c1
R
0.12
BASE METAL
R1
0.12
---
---
WITH PLATING
DETAIL A
NOTE:
ZD
1. CONTROLLING DIMENSION : MILLIMETERS
A
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
e
E
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
b
SEATING PLANE
0.100(0.004")
Document :1G5-0177
Rev.2
Page69
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
