Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
VIS
Ordering information
Part Number
Cycle time
7ns
Package
400mil
VG36648041BT-7
VG36648041BT-8
VG36648041BT-10
8ns
54-Pin
10ns
Plastic TSOP
VG36648041BT-8
• VIS Memory Product
• Technology/Design Rule
• VG
• 36
• 64Mb
• 64
• 80
• 4
• Device Configuration, 80: x8
• Device Infernal Banks
• Interface Type, 1: LVTTL
• Mask/Design Version
• 1
• B
• Package Type, T: TSOP
• T
• 8
• Cycle time, 10: 10ns, 8: 8ns, 7: 7ns
Packaging Information
• 400mil, 54-Pin Plastic TSOP
RAD R1
MILLIMETERS
DIM
INCHES
RAD R
MIN.
NOM.
MAX.
1.20
0.15
1.05
0.45
0.40
0.21
0.16
22.35
MIN.
---
NOM.
MAX.
0.047
0.006
0.041
0.018
0.016
0.008
0.006
0.880
54
28
---
---
---
A
A1
A2
b
A2
0.05
0.95
0.30
0.30
0.12
0.12
22.09
---
1.00
0.002
0.037
0.012
0.012
0.005
0.005
0.870
---
B
c
0.039
---
---
B
---
---
b1
c
---
L
A1
E1
¢
X ¢ X
~8
0
---
DETAIL A
---
c1
D
---
22.22
0.71 REF.
0.80 BASIC
11.76
10.16
0.50
0.875
0.028 REF.
ZD
b
e
0.0315 BASIC
SECTION B-B
b1
E
11.56
10.03
0.40
11.96
10.29
0.60
0.25
---
0.455
0.463
0.400
0.020
---
0.471
0.405
0.024
0.010
---
1
27
D
E1
L
0.395
0.016
0.005
0.005
c
c1
R
0.12
---
BASE METAL
R1
0.12
---
---
WITH PLATING
DETAIL A
NOTE:
ZD
1. CONTROLLING DIMENSION : MILLIMETERS
A
2. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.
MOLD PROTRUSION SHALL NOT EXCEED 0.15mm(0.006") PER SIDE.
DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.
INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25mm(0.01") PER SIDE.
e
E
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO
BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm.
DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER
THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.
b
SEATING PLANE
0.100(0.004")
Document : 1G5-0153
Rev.1
Page70
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
