VIS
Parameter
Operating current
Symbol
I
CC1
VG36128401BT / VG36128801BT / VG36128161BT
CMOS Synchronous Dynamic RAM
DC Characteristics 1
(Ta = 0 ~ 70°C, V
DD
= V
DDQ
= 3.3
±
0.3V, V
SS
= V
SSQ
= 0V, Ouput Open, unless otherwise noted)
Test Conditions
One bank active
t
RC
= t
RC(MIN)
, t
CLK
= t
CLK(MIN)
,
BL = 1, CL=3
Organization
x4
x8
x16
x4/x8/x16
x4/x8/x16
x4/x8/x16
Limits (max.)
-7H
-7L
-8H
100
95
95
110
100
100
130
120
120
2
1
25
2
1
25
2
1
25
Unit Notes
mA
1
Precharge standby current I
CC2
P
in power down mode
I
CC2
PS
Precharge standby current I
CC2
N
in non power down mode
I
CC2
NS
≤
V
IL(MAX),
t
CK
= 15ns
CKE
≤
V
IL(MAX)
, CLK
≤
V
IL(MAX)
CKE
≥
V
CC
- 0.2V
CS
t
CK
= 15ns, CKE
≥
V
IH(MIN)
CKE
CS
CKE
≥
V
CC
- 0.2V
CLK
≤
V
IL(MAX),
CKE
≥
V
IH(MIN)
CKE
V
CKE
All input signals are stable.
CKE
CS
mA
mA
2
x4/x8/x16
15
15
15
mA
Active standby current in
Nonpower down mode
I
CC3
N
≥
V
CC
- 0.2V
CKE
t
CK
= 15ns, CKE
≥
V
IH(MIN)
x4/x8/x16
30
30
30
mA
2
I
CC3
NS
CKE
CS
≥
V
CC
- 0.2V
CLK
≤
V
IL(MAX),
CKE
≥
V
IH(MIN)
CKE
V
All input signals are stable.
All banks active
t
CK
= t
CK(MIN)
, BL=4, CL=3
All banks active
x4/x8/x16
x4
x8
x16
x4/x8/x16
x4/x8/x16
20
140
150
160
160
2
0.8
20
110
120
130
160
2
0.8
20
110
120
130
160
2
0.8
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
NOTES
I
CC4
mA
mA
mA
mA
3
4
I
CC5
I
CC6
t
RC
= t
RC(MIN)
, t
CLK
= t
CLK(MIN)
CKE
≤
0.2V
1. I
CC(max)
is specified at the output open condition.
2. Input signals are changed one time during 30ns.
3. Normal version: VG36128401BT-7H / VG36128801BT-7L / VG36128161BT-8H
4. Low power version: VG36128401BTL-7H / VG3636128401BTL-7L / VG3636128401BTL-8H
DC Characteristics 2
(Ta = 0 ~ 70°C, V
DD
= V
DDQ
= 3.3
±
0.3V , V
SS
= V
SSQ
= 0V, unless otherwise noted)
Parameter
Input leakage current (Inputs)
Output leakage current (I/O pins)
High level output voltage
Low level output voltage
Symbol
I
I (L)
I
O (L)
V
OH
(DC)
V
OL
(DC)
Test Condition
0
≤
V
IN
≤
V
DD(MAX)
Pins not under test = 0V
0
≤
V
OUT
≤
V
DD(MAX)
DQ# in H - Z., D
OUT
is disabled
I
OH
= -2mA
I
OL
= 2mA
Min
-10
-10
2.4
0.4
Max
10
10
Unit
uA
uA
V
V
Document :1G5-0183
Rev.1
Page 6
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
