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VG36128401BT 参数 Datasheet PDF下载

VG36128401BT图片预览
型号: VG36128401BT
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS同步动态RAM [CMOS Synchronous Dynamic RAM]
分类和应用:
文件页数/大小: 68 页 / 1356 K
品牌: VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
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VG36128401BT / VG36128801BT / VG36128161BT  
CMOS Synchronous Dynamic RAM  
VIS  
6. Burst Length and Sequence  
(Burst of Two)  
Starting Address  
(column address A0, binary)  
Sequential Addressing  
Sequence (decimal)  
Interleave Addressing Sequence  
(decimal)  
0
1
0, 1  
1, 0  
0, 1  
1, 0  
(Burst of Four)  
Starting Address  
(column address A1 - A0, binary)  
Sequential Addressing  
Sequence (decimal)  
Interleave Addressing Sequence (decimal)  
00  
01  
10  
11  
0, 1, 2, 3  
1, 2, 3, 0  
2, 3, 0, 1  
3, 0, 1, 2  
0, 1, 2, 3  
1, 0, 3, 2  
2, 3, 0, 1  
3, 2, 1, 0  
(Burst of Eight)  
Starting Address  
(column address A2 - A0, binary)  
Sequential Addressing  
Sequence (decimal)  
Interleave Addressing Sequence  
(decimal)  
000  
001  
010  
011  
100  
101  
110  
111  
0, 1, 2, 3, 4, 5, 6, 7  
1, 2, 3, 4, 5, 6, 7, 0  
2, 3, 4, 5, 6, 7, 0, 1  
3, 4, 5, 6, 7, 0, 1 ,2  
4, 5, 6, 7, 0, 1, 2, 3  
5, 6 ,7, 0, 1, 2, 3, 4  
6, 7 ,0 ,1 ,2 ,3 ,4 ,5  
7, 0, 1, 2, 3, 4, 5, 6  
0, 1, 2, 3, 4, 5, 6, 7  
1, 0, 3, 2, 5, 4, 7, 6  
2, 3, 0, 1, 6, 7, 4, 5  
3, 2, 1, 0, 7, 6, 5, 4  
4, 5, 6, 7, 0, 1, 2, 3  
5, 4, 7, 6, 1, 0, 3, 2  
6, 7, 4, 5, 2, 3, 0, 1  
7, 6, 5, 4, 3, 2, 1, 0  
Full page burst is an extension of the above tables of sequential addressing, with the length being 2,048  
(for 32Mx4), 1,024 (for 16M x 8) and 512 (for 8Mx16).  
Document :1G5-0183  
Rev.1  
Page17  
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