VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
Refresh Cycle
VG26 (V) (S) 17400E
-5 -6
Unit
Notes
Min
10
Max
Min
10
Max
Parameter
Symbol
tCSR
CAS setup time (CBR refresh)
CAS hold time (CBR refresh)
RAS precharge to CAS hold time
RAS pulse width (self refresh)
RAS precharge time (self refresh)
CAS hold time (CBR self refresh)
WE setup time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ms
ns
ns
ns
ns
tCHR
tRPC
tRASS
tRPS
10
7
10
5
10
5
100
90
-50
0
100
110
-50
0
tCHS
tWSR
tWHR
WE hold time
10
10
Fast Page Mode Cycle
VG26 (V) (S) 17400E
-5 -6
Unit
Notes
Min
Max
Min
Max
Parameter
Symbol
tPC
Fast page mode cycle time
Fast page mode CAS Precharge time
Fast page mode RAS pulse width
Access time from CAS precharge
35
-
-
40
-
ns
ns
tCP
10
50
-
10
60
-
-
105
30
-
105 ns
35 ns
20
tRASP
tCPA
10,14
tCPRH
30
35
-
ns
RAS hold time from CAS precharge
Fast Page Mode Read Modify Write Cycle
VG26 (V) (S) 17400E
-5 -6
Unit Notes
Min
45
Max
Min
55
Max
Parameter
Symbol
Fast page mode read - modify - write cycle CAS
precharge to WE delay time
tCPW
-
-
-
-
ns
ns
11
Fast page mode read - modify - write cycle time
tPRWC
70
80
Document : 1G5-0142
Rev.1
Page12
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
