VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
VIS
AC Characteristics
(Ta = 0 to + 70°C, VCC = 5V ±10% or 3.3V ±10%, VSS = 0V) * 1, * 2, * 3, * 4
Test conditions
• Output load : two TTL Loads and 100pF(VCC = 5.0V±10%)
one TTL Load and 100pF(VCC = 3.3V±10%)
• Input timing reference levels :
VIH = 2.4V, VlL = 0.8V (VCC = 5.0V±10%); VIH = 2.0V, VlL = 0.8V (VCC = 3.3V±10%)
• Output timing reference levels :
VOH = 2.0V, VOL = 0.8V (VCC = 5V±10%, 3.3V±10%)
Read, Write, Read - Modify - Write and Refresh Cycles
(Common Parameters)
VG26 (V) (S) 17400E
-5
-6
Unit Notes
Min
90
Max
Min
110
Max
Parameter
Symbol
tRC
-
-
-
-
-
-
ns
ns
ns
Random read or write cycle time
RAS precharge time
tRP
tCPN
tRAS
tCAS
tASR
tRAH
tASC
tCAH
tRCD
tRAD
tRAL
tRSH
tCSH
tCRP
tOED
tT
30
10
40
10
CAS precharge time in normal mode
RAS pulse width
50 10000
12 10000
10000 ns
5
6
60
15 10000 ns
CAS pulse width
0
8
-
0
10
0
-
-
-
-
ns
ns
ns
ns
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
Column address to RAS lead time
RAS hold time
-
0
-
7
8
-
10
14
12
30
15
60
5
12
10
25
13
50
5
37
45 ns
30 ns
8
9
25
-
-
-
-
-
-
ns
ns
ns
ns
ns
-
-
CAS hold time
-
10
11
CAS to RAS precharge time
OE to Din delay time
12
1
-
50
32
128
-
15
1
50 ns
32 ms
128 ms
Transition time (rise and fall)
Refresh period
tREF
tREF
tCLZ
tDZC
tDZO
-
-
-
-
Refresh period (S - Version)
CAS to output in Low-Z
CAS delay time from Din
OE delay time from Din
0
0
-
-
-
ns
ns
ns
0
-
0
0
-
0
Document : 1G5-0142
Rev.1
Page10
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
