VSC7984
Datasheet
E
LECTRICAL
S
PECIFICATIONS
This section provides the DC characteristics, AC characteristics, recommended operating conditions, and stress
ratings for the VSC7984 device.
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DC Characteristics
Specifications are guaranteed over the recommended operating conditions listed in
pattern at PRBS 2
31
–1 and 11.3 Gbps, unless otherwise noted.
Table 1. DC Characteristics
Symbol
V
CC
– V
EE
I
EE
P
DNOMINAL
I
Q
P
DQ
V
MOD
V
OFS
V
BIAS_MAX
V
IH
V
IL
V
REF
I
VREF
V
TEMP
Parameter
Power supply voltage
Power supply current (nominal bias
and modulation current)
Power dissipation (nominal bias and
modulation current)
Quiescent power supply current
Quiescent power dissipation
Output modulation control voltage
Output offset control voltage for
output bias
Maximum output bias voltage
Input HIGH voltage (ENABLE)
Input LOW voltage (ENABLE)
Reference voltage output
Reference voltage current output
Temperature monitor output voltage
(±6 °C part-to-part variation)
V
CC
– 1.58
V
CC
– 2.05
V
EE
+ 2.4
V
EE
+ 2.5
V
CC
– 3.0
V
CC
– 4.0
V
EE
+ 2.7
4
V
CC
– 1.51
V
CC
– 1.99
V
EE
V
EE
V
CC
– 1.40
Minimum
4.75
Typical
5.0
300
1510
150
780
Maximum
5.5
315
1735
160
880
V
EE
+ 2.0
V
EE
+ 2.0
V
CC
– 1.15
Unit
V
mA
mW
mA
mW
V
V
V
V
V
V
mA
V
V
C
LOAD
< 100 pF.
Sourcing.
T
J
= 20 °C.
See
T
J
= 120 °C.
See
V
OM
= 2.5 V, V
BIAS
= 1 V.
V
OM
= 2.5 V, V
BIAS
= 1 V.
ENABLE = LOW.
ENABLE = LOW.
See
See
R
L
= 50
Ω.
See
Condition
7 of 16
VMDS-10029 Revision 4.1
January 19, 2007
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
