VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7923
Table 5: Power Dissipation
Symbol
I
VSS
P
D
P
DMAX
SONET/SDH 2.5Gb/s Laser Diode Driver
Parameter
Power Supply Current (VSS)
Total Power Dissipation
Maximum Power Dissipation
Min
—
—
—
Typ
—
—
—
Max
220
1210
1815
Units
mA
mW
mW
Conditions
V
SS
= -5.5V, I
MOD
= I
BIAS
= 0mA
V
SS
= -5.5V, I
MOD
= I
BIAS
= 0mA,
R
LOAD
= 25Ω to GND
V
SS
= -5.5V, I
MOD
= 60mA,
I
BIAS
= 50mA, I
OUT
= 0V
Table 6: Laser Driver DC Electrical Specifications
Symbol
I
BIAS
I
MOD
V
IB
V
IP
V
OCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min
2
2
—
—
GND -
2.2V
Typ
—
—
—
—
—
Max
50
60
V
SS
+
2.1
V
SS
+
2.1
—
Units
mA
mA
V
V
V
—
Conditions
—
I
BIAS
= 50mA
I
MOD
= 60mA
V
SS
= -5.2V
Table 7: Laser Driver AC Electrical Specifications
Symbol
t
R
, t
F
Parameter
Output Rise and Fall Times
Min
—
Typ
—
Max
100
Units
ps
Conditions
25Ω load, 20%-80%,
15mA < I
MOD
< 60mA,
I
BIAS
= 20mA
Table 8: Package Thermal Specifications
Symbol
θ
JCC
θ
JCMG
Parameter
Thermal Resistance from Junction-to-Case
Thermal Resistance from Junction-to-Case
Min
—
—
Typ
25
32
Max
—
—
Units
°C/W
°C/W
Conditions
Ceramic Package
Metal Glass Package
G52203-0, Rev 3.0
05/11/01
©
VITESSE
SEMICONDUCTOR CORPORATION
• 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 3