VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
SONET/SDH 2.5Gb/s Laser Diode Driver
VSC7923
Table 1: Signal Pin Reference
Signal
Type
Level
# Pins
Description
DIN
In
Out
Out
Out
Pwr
Pwr
In
ECL
ECL
1
2
Data Input
MK, NMK
NIOUT
IOUT
VSS
Data Density Differential Outputs
Laser Modulation Current Output (Complementary)
Laser Modulation Current Output (To Laser Cathode))
Negative Voltage Rail
1
1
Pwr
Pwr
DC
DC
DC
DC
DC
5
GND
9
Positive Voltage Rail
VIP
1
Modulation Gate Node
MIP
In
1
Modulation Source Node
VIB
In
1
Bias Gate Node
MIB
In
1
Bias Source Node
VREF
Total Pins
In
1
Data Input Reference
24
Table 2: Absolute Maximum Ratings
Symbol
Rating
Limit
VSS
TJ
Negative Power Supply Voltage
Maximum Junction Temperature
Storage Temperature
VCC to -6.0V
-55°C to + 125°C
-65°C to +150°C
TSTG
Table 3: Recommended Operating Conditions
Symbol
Parameter
Positive Voltage Rail
Min
Typ
Max
Units
Conditions
GND
VSS
TCl
—
-5.5
-40
—
0
—
-4.9
85(2)
125
V
V
Negative Voltage Rail
Operational Temperature(1)
Junction Temperature
-5.2
—
—
°C
°C
Power dissipation = 1.25W
TJ
NOTES: (1) Lower limit of specification is ambient temperature and upper limit is case temperature. (2) See section “Calculation of the
Maximum Case Temperature” for detailed maximum temperature calculations.
Table 4: ECL Input and Outputs
Symbol
Parameter
Input Voltage Swing
Min
Typ
Max
Units
Conditions
VIN
300
-1200
—
—
—
—
800
—
mV
mV
mV
Peak-to-peak, VREF = -2.0V
50Ω to -2.0V
VOH
VOL
ECL Output High Voltage
ECL Output Low Voltage
-1600
50Ω to -2.0V
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
Page 2
G52203-0, Rev 3.0
05/11/01
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
