VITESSE
SEMICONDUCTOR CORPORATION
Data Sheet
1.0625 Gbits/sec Fibre
Channel Transceiver
VSC7125
DC Characteristics (Over recommended operating conditions).
Parameters
Description
Min
Typ
Max
Units
Conditions
= -1.0 mA
2.4
—
—
—
—
V
V
V
Output HIGH voltage (TTL)
Output LOW voltage (TTL)
I
I
OH
OH
0.5
V
= +1.0 mA
OL
OL
TX Output differential peak-
to-peak voltage swing
75Ω to V – 2.0 V
(TX+ - TX-)
1
1
DD
1200
1200
300
—
—
—
2200
2200
2600
mVp-p
mVp-p
mVp-p
∆V
OUT75
TX Output differential peak-
to-peak voltage swing
50Ω to V – 2.0 V
DD
∆V
OUT50
(TX+ - TX-)
Receiver differential peak-to-
peak Input Sensitivity RX
Internally biased to Vdd/2
(RX+ - RX-)
1
∆V
IN
2.0
0
—
—
50
—
—
5.5
0.8
V
V
V
Input HIGH voltage (TTL)
Input LOW voltage (TTL)
Input HIGH current (TTL)
Input LOW current (TTL)
Supply voltage
IH
V
—
IL
—
500
-500
3.47
µA
µA
V
I
V
V
=2.4V
=0.5V
IH
IN
IN
—
I
IL
3.14
VDD
3.3V±5%
Outputs open,
VDD = VDD max
—
—
625
190
900
260
mW
mA
P
Power dissipation
Supply Current
D
Outputs open,
VDD = VDD max
I
DD
Note: (1) Refer to Application Note, AN-37, for differential measurement techniques.
Absolute Maximum Ratings (1)
Power Supply Voltage, (VDD).............................................................................................................-0.5V to +4V
DC Input Voltage (PECL inputs)............................................................................................ -0.5V to VDD +0.5V
DC Input Voltage (TTL inputs) .........................................................................................................-0.5V to 5.5V
DC Output Voltage (TTL Outputs)........................................................................................ -0.5V to VDD + 0.5V
Output Current (TTL Outputs) ................................................................................................................ +/-50mA
Output Current (PECL Outputs)............................................................................................................... +/-50mA
Case Temperature Under Bias .........................................................................................................-55o to +125oC
Storage Temperature.....................................................................................................................-65oC to +150oC
Maximum Input ESD (Human Body Model).............................................................................................. 1500 V
Recommended Operating Conditions
Power Supply Voltage, (VDD)................................................................................................................ +3.3V+5%
Operating Temperature Range ............................................................0oC Ambient to +100oC Case Temperature
Notes:
(1) CAUTION: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing per-
manent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may
affect device reliability.
Page 10
VITESSE SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52121-0, Rev. 4.1
4/23/98
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
