VITESSE
SEMICONDUCTOR CORPORATION
1Gb/s 16-Channel
Drive-Side Deskew IC
Data Sheet
VSC6250
DC Characteristics
Table 3: Single Ended ECL Inputs and Outputs
Parameter
V
OH
V
OL
V
IH
V
IL
I
IH
I
IL
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input HIGH Current
Input LOW Current
Min
-1020
-2000
-1165
-2000
-
-50
Typ
—
—
—
—
—
—
Max
-700
-1620
-700
-1475
200
—
Units
mV
mV
mV
mV
µA
µA
Conditions
V
IN
= V
IH
(max)
V
IN
= V
IL
(min)
NOTE: V
TT
= -2.0V ± 5%, V
CC
= V
CCA
= GND, R
LOAD
= 50Ω to -2.0V, external reference (V
REF
) = -1.32V ± 25mV.
Table 4: Differential ECL Inputs and Outputs
Parameter
V
INDIFF
Description
Input Voltage Differential
Min
200
Typ
—
Max
—
Units
mV
Conditions
Required for full
output swing
Common-mode range
required for full output
swing with V
DIFF
applied
Output voltage swing
Common-mode output
voltage
V
INCM
V
OUTDIFF
V
OUTCM
Input Common-Mode Voltage
-1.5
—
-0.5
V
Output Voltage Differential
Output Common-Mode Voltage
400
-1.5
—
—
—
-0.7
mV
V
Table 5: VSC6250 Power Dissipation
Parameter
I
TT
P
D
Description
V
TT
Supply Current
Power Dissipation
(1)
Min
—
—
Typ
2000
4
Max
2870
6
Units
mA
W
Conditions
NOTE: (1) Output power dissipation does not include load power.
Page 8
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VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52197-0, Rev. 4.0
8/19/00
VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
