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VBUS054B-HSF-GS08 参数 Datasheet PDF下载

VBUS054B-HSF-GS08图片预览
型号: VBUS054B-HSF-GS08
PDF下载: 下载PDF文件 查看货源
内容描述: 4线总线端口的ESD保护 [4-Line BUS-port ESD-protection]
分类和应用:
文件页数/大小: 8 页 / 295 K
品牌: VISHAY [ VISHAY ]
 浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第1页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第2页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第3页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第5页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第6页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第7页浏览型号VBUS054B-HSF-GS08的Datasheet PDF文件第8页  
VBUS054B-HS3  
Vishay Semiconductors  
120  
200  
150  
100  
50  
acc. IEC 61000-4-2  
Pin 1, 3, 4 or 6 to Pin 2  
100  
80  
60  
40  
20  
0
+ 8 kV  
contact discharge  
acc. IEC 61000-4-2  
contact discharge  
0
V
C-ESD  
Pin 1, 3, 4, 6 to Pin 2  
- 50  
- 100  
- 150  
- 200  
- 250  
Pin 2 to Pin 1, 3, 4 or 6  
- 20  
- 10 0 10 20 30 40 50 60 70 80 90  
0
5
10  
15  
20  
20555  
20553  
VESD (kV)  
t (ns)  
Figure 7. Typical Clamping Performance at + 8 kV  
Contact Discharge (acc. IEC 61000-4-2)  
Figure 9. Typical Peak Clamping Voltage at ESD  
Contact Discharge (acc. IEC 61000-4-2)  
20  
140  
Pin 1, 3, 4 or 6 to Pin 2  
acc. IEC 61000-4-2  
120  
0
contact discharge  
100  
- 20  
- 40  
- 60  
Pin 5 to Pin 2  
80  
60  
40  
20  
0
VC-ESD  
- 80  
acc. IEC 61000-4-2  
- 100  
- 120  
- 140  
- 160  
- 8 kV  
contact discharge  
- 20  
- 40  
- 60  
- 80  
Pin 2 to Pin 5  
5
0
10  
15  
20  
- 10  
0
10 20 30 40 50 60 70 80 90  
20554  
20556  
VESD (kV)  
t (ns)  
Figure 8. Typical Clamping Performance at - 8 kV  
Contact Discharge (acc. IEC 61000-4-2)  
Figure 10. Typical Peak Clamping Voltage at ESD  
Contact Discharge (acc. IEC 61000-4-2)  
Application Note:  
With the VBUS054B-HS3 a double, high speed USB-port or up to 4 other high speed signal or data lines can  
be protected against transient voltage signals. Negative transients will be clamped close below the ground level  
while positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the  
supply line (V  
at pin 5) to ground (pin 2). The high speed data lines, D , D , D and D , are connected  
BUS  
1+ 2+ 1- 2-  
to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the V  
-level,  
BUS  
the low capacitance PN-diodes offer a very high isolation to V  
, ground and to the other data lines. But as  
BUS  
soon as any transient signal exceeds this working range, one of the PN-diodes starts working in the forward  
mode and clamps the transient to ground or to the avalanche breakthrough voltage level of the Z-diode  
between pin 5 and pin 2.  
t
w
i
R
E
C
E
I
V
E
R
VBUS  
D1+  
D1-  
n
6
1
5
2
4
3
U
S
B
-
P
o
r
D2+  
D2-  
IC  
t
GND  
20399  
www.vishay.com  
4
Document Number 81586  
Rev. 1.4, 07-Oct-08  
For technical support, please contact: ESD-Protection@vishay.com