VBUS054B-HS3
Vishay Semiconductors
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
100
10
8 µs to 100 %
100 %
80 %
60 %
40 %
20 %
Pin 2 to Pin 5
1
Pin 2 to Pin 1, 3, 4 or 6
20 µs to 50 %
0.1
0.01
0.001
0 %
0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
0
10
20
30
40
20550
20548
VF (V)
Time (µs)
Figure 1. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
120 %
9
Pin 1, 3, 4 or 6 to Pin 2
Rise time = 0.7 ns to 1 ns
100 %
8
7
Pin 5 to Pin 2
80 %
6
5
4
3
2
1
0
60 %
53 %
40 %
27 %
20 %
0 %
0.01
0.1
1
10
100 1000 10000
- 10 0 10 20 30 40 50 60 70 80 90 100
20551
IR (µA)
20557
Time (ns)
Figure 2. ESD Discharge Current Wave Form
Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR
acc. IEC 61000-4-2 (330 Ω/150 pF)
20
1.0
Measured acc. IEC 61000-4-5
f = 1 MHz; VBUS (at Pin 5) = 5 V
0.9
(8/20 µs - wave form)
15
0.8
Pin 1, 3, 4 or 6 to Pin 2
10
0.7
Pin 1, 3, 4 or 6 to Pin 2
0.6
Pin 5 to Pin 2
5
0.5
0.4
0.3
VC
Pin 2 to Pin 5
0
- 5
0.2
0.1
0.0
Pin 2 to Pin 1, 3, 4 or 6
- 10
0
1
2
3
4
0
1
2
3
4
5
6
20549
20552
VIN (V)
IPP (A)
Figure 3. Typical Input Capacitance CIN at Pin 1, 3, 4, or 6 vs.
Input Voltage VIN
Figure 6. Typical Peak Clamping Voltage VCvs.
Peak Pulse Current IPP
Document Number 81586
Rev. 1.4, 07-Oct-08
www.vishay.com
For technical support, please contact: ESD-Protection@vishay.com
3
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