VBUS054B-HS3
Vishay Semiconductors
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
VBUS054B-HS3
Parameter
Protection paths
Test conditions/remarks
Symbol
N lines
Min.
5
Typ.
Max.
4
Unit
Number of line which can be protected
lines
at IR = 0.1 µA
Pin 1, 3, 4 or 6 to pin 2
at VIN = VRWM = 5 V
Pin 1, 3, 4 or 6 to pin 2
at IR = 1 mA
VRWM
IR
Reverse stand-off voltage
Reverse current
V
µA
V
< 0.01
7.1
0.1
8
VBR
VBR
VC
6.3
6.9
Pin 5 to pin 2
Reverse breakdown voltage
at IR = 1 mA
7.9
8.7
15
5
V
Pin 1, 3, 4 or 6 to pin 2
at IPP = 3 A; Pin 1, 3, 4 or 6 to pin 2;
acc. IEC 61000-4-5
Reverse clamping voltage
Forward clamping voltage
V
at IF = 3 A; Pin 2 to pin 1, 3, 4 or 6;
acc. IEC 61000-4-5
VF
V
Pin 1, 3, 4 or 6 to pin 2
V
IN (at pin 1, 3, 4 or 6) = 0 V and
CD
CD
0.8
0.5
1
pF
pF
VBUS (at pin 5) = 5 V; f = 1 MHz
Capacitance
Pin 1, 3, 4 or 6 to pin 2
V
IN (at pin 1, 3, 4 or 6) = 2.5 V and
0.8
VBUS (at pin 5) = 5 V; f = 1 MHz
dCD
CZD
Line symmetry
Difference of the line capacitances
0.05
pF
pF
Pin 5 to pin 2
at VR = 0 V; f = 1 MHz
Supply line capacitance
110
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Document Number 81586
Rev. 1.4, 07-Oct-08
For technical support, please contact: ESD-Protection@vishay.com
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