Si7806DN
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6
0.4
0.2
V
GS(th)
Variance (V)
–0.0
–0.2
–0.4
–0.6
10
–0.8
–1.0
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
Power (W)
30
I
D
= 250
mA
40
50
Single Pulse Power, Juncion-To-Ambient
20
Safe Operating Area
100
r
DS(on)
Limited
I
DM
Limited
P(t) = 0.0001
10
I
D
– Drain Current (A)
P(t) = 0.001
1
I
D(on)
Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
0.1
T
C
= 25_C
Single Pulse
BV
DSS
Limited
0.01
0.1
1
10
100
P(t) = 10
dc
V
DS
– Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 65_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
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4
Document Number: 71869
S-20805—Rev. A, 17-Jun-02