Si7806DN
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025
1400
1200
r
DS(on)
– On-Resistance (
W
)
0.020
C – Capacitance (pF)
1000
800
600
400
200
0.000
0
5
10
15
20
25
30
35
40
0
0
5
10
15
20
25
30
C
rss
C
oss
Vishay Siliconix
Capacitance
C
iss
0.015
V
GS
= 4.5 V
0.010
V
GS
= 10 V
0.005
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 14.4 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
8
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
4
8
12
16
20
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
0.025
50
On-Resistance vs. Gate-to-Source Voltage
I
D
= 14.4 A
r
DS(on)
– On-Resistance (
W
)
0.020
I
D
= 5 A
0.015
I
S
– Source Current (A)
T
J
= 150_C
10
0.010
T
J
= 25_C
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
www.vishay.com
3
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