Si7806DN
Vishay Siliconix
New Product
MOSFET SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 24 V, V
GS
= 0 V
V
DS
= 24 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 14.4 A
V
GS
= 4.5 V, I
D
= 12.6 A
V
DS
= 15 V, I
D
= 14.4 A
I
S
= 3.2 A, V
GS
= 0 V
40
0.009
0.0145
34
0.77
1.2
0.011
0.0175
S
V
1.0
3
"100
1
5
V
nA
mA
m
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gt
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.2 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
V
DS
= 15 V, V
GS
= 10 V, I
D
= 14.4 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 14.4 A
8.5
19
3.6
3.0
2
8
12
25
10
35
15
20
40
20
70
ns
W
11
24
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
35
V
GS
= 10 thru 4 V
30
I
D
– Drain Current (A)
25
20
15
10
3V
5
0
0.0
5
0
0.0
25_C
–55_C
I
D
– Drain Current (A)
30
25
20
15
10
T
C
= 125_C
40
35
Transfer Characteristics
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71869
S-20805—Rev. A, 17-Jun-02
2
VISHAY [ VISHAY TELEFUNKEN ]
