Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.10
0.08
0.06
0.04
0.02
0.00
40
T
= 150_C
J
10
T
= 25_C
J
I
D
= 10 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
SD
- Source-to-Drain Voltage (V)
Threshold Voltage
Single Pulse Power
0.6
0.4
80
60
40
20
0
0.2
I
D
= 250 ꢁ A
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-50
-25
0
25
50
75
100 125 150
0.01
0.10
1.00
10.00
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 50_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
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