Si4410DY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 ꢁ A
1.0
3.0
"100
1
V
GS(th)
DS
GS
D
I
V
DS
= 0 V, V = "20 V
nA
GSS
GS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
ꢁ
A
DSS
V
DS
= 30 V, V = 0 V, T = 55_C
V
25
GS
J
a
On-State Drain Current
I
w 5 V, V = 10 V
20
A
D(on)
DS
GS
V
V
= 10 V, I =10 A
0.011
0.015
38
0.0135
0.020
GS
GS
DS
D
a
Drain-Source On-State Resistance
r
ꢀ
DS(on)
= 4.5 V, I = 5 A
D
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
S
V
D
a
Diode Forward Voltage
V
SD
I
S
= 2.3 A, V = 0 V
0.7
1.1
GS
Dynamicb
Gate Charge
Q
V
= 15 V, V = 5 V, I = 10 A
20
37
7
34
60
g
DS
GS
D
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
gt
nC
V
V
= 15 V, V = 10 V, I = 10 A
GS D
DS
Q
Q
gs
gd
= 15 V, V = 10 V, I = 10 A
7.0
1.5
19
9
DS
GS
D
R
g
0.5
2.6
30
ꢀ
t
d(on)
t
r
20
V
DD
= 25 V, R = 25 ꢀ
L
I
D
^ 1 A, V
= 10 V, R = 6 ꢀ
GEN G
Turn-Off Delay Time
Fall Time
t
70
20
40
100
80
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
Notes
t
rr
I
F
= 2.3 A, di/dt = 100 A/ꢁ s
80
a. Pulse test; pulse width v 300 ꢁ s, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing. Values shown are for product revision A.
Document Number: 71726
S-40838—Rev. L, 03-May-04
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