Si4410DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 V thru 4 V
40
30
20
10
0
T
= 125_C
C
25_C
3 V
8
-55_C
0
2
4
6
10
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3000
2500
2000
1500
1000
500
C
iss
V
GS
= 4.5 V
V
GS
= 10 V
C
oss
C
rss
0
0
10
20
30
40
50
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.0
1.5
1.0
0.5
0.0
V
D
= 15 V
V
GS
= 10 V
DS
I
= 10 A
I = 10 A
D
6
4
2
0
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
T
- Junction Temperature (_C)
Q
- Total Gate Charge (nC)
J
g
Document Number: 71726
S-40838—Rev. L, 03-May-04
www.vishay.com
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