IRFL9014, SiHFL9014
Vishay Siliconix
600
500
- I
SD
, Reverse Drain Current (A)
Capacitance (pF)
V
GS
= 0
V,
f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
1
150
°
C
25
°
C
400
300
200
100
0
10
0
10
1
C
iss
C
oss
10
0
C
rss
10
-1
1.0
91195_07
V
GS
= 0
V
2.0
3.0
4.0
5.0
6.0
91195_05
-
V
DS,
Drain-to-Source
Voltage
(V)
-
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
-
V
GS
, Gate-to-Source
Voltage
(V)
I
D
= -6.7 A
V
DS
= -48
V
10
2
5
Operation in this area limited
by
R
DS(on)
- I
D
, Drain Current (A)
16
V
DS
= -30
V
12
2
10
5
2
100
µs
1
ms
10
ms
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
2
5
8
1
5
4
For test circuit
see figure 13
2
0
0
91195_06
4
8
12
16
91195_08
0.1
0.1
1
2
5
10
2
5
10
2
2
5
10
3
Q
G
, Total Gate Charge (nC)
-
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
VISHAY [ VISHAY TELEFUNKEN ]
