IRFL9014, SiHFL9014
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T
C
= 25 °C
T
A
= 25 °C
SYMBOL
P
D
dV/dt
T
J
, T
stg
LIMIT
3.1
2.0
- 4.5
- 55 to + 150
300
d
UNIT
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 50 mH, R
G
= 25
Ω,
I
AS
= - 1.8 A (see fig. 12).
c. I
SD
≤
- 6.7 A, dI/dt
≤
90 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
60
40
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 48 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= 1.1 A
b
V
DS
= - 25 V, I
D
= 1.1 A
b
- 60
-
- 2.0
-
-
-
-
1.3
-
- 0.059
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.50
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
270
170
31
-
-
-
11
63
9.6
31
4.0
6.0
-
-
-
12
3.8
5.1
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 6.7 A, V
DS
= - 48 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 30 V, I
D
= - 6.7 A,
R
G
= 24
Ω,
R
D
= 4.0
Ω,
see fig. 10
b
-
-
-
-
G
-
S
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Document Number: 91195
S-81412-Rev. A, 07-Jul-08
VISHAY [ VISHAY TELEFUNKEN ]
