IRFL9014, SiHFL9014
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
-
-
-
80
0.096
- 1.8
A
- 14
- 5.5
160
0.19
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 1.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 6.7 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Top
V
GS
-
15
V
10
1
25
°
C
150
°
C
- I
D
, Drain Current (A)
- I
D
, Drain Current (A)
10
1
-10
V
-8.0
V
-7.0
V
-6.0
V
-5.5
V
-5.0
V
Bottom -4.5
V
10
0
10
0
4.5
V
10
-1
20
µs
Pulse
Width
T
C
=
25 °C
10
-1
10
0
10
1
10
-1
20
µs
Pulse
Width
V
DS
=
- 25
V
4
5
6
7
8
9
10
91195_01
-
V
DS
, Drain-to-Source
Voltage
(V)
91195_03
-
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.5
10
1
I
D
= - 6.7 A
V
GS
= 10
V
- I
D
, Drain Current (A)
2.0
1.5
10
0
Top
V
GS
-
15
V
4.5
V
1.0
10
-1
-10
V
-8.0
V
-7.0
V
-6.0
V
-5.5
V
-5.0
V
Bottom -4.5
V
0.5
20
µs
Pulse
Width
T
C
=
150 °C
10
1
10
0
91195_02
0.0
- 60 - 40 - 20 0
20 40 60
80
100 120 140 160
-
V
DS,
Drain-to-Source
Voltage
(V)
91195_04
T
J,
Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91195
S-81412-Rev. A, 07-Jul-08
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