IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
10
2
10.0
I
SD
, Reverse Drain Current (A)
10
T
J
= 175
°
C
I
D
, Drain Current (A)
V
GS
= 0
V
1.2
91033_09
8.0
6.0
1
T
J
= 25
°
C
4.0
2.0
0.1
0.2
91033_07
0.4
0.6
0.8
1.0
0.0
25
50
75
100
125
150
175
V
SD
, Source-to-Drain
Voltage
(V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
T
C
, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
V
DS
V
GS
10
2
D.U.T.
+
-
V
DD
I
D
, Drain-to-Source Current (A)
Operation in this area limited
by
R
DS(on)
R
G
10
V
10
100
µs
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
1
T
C
= 25
°C
T
J
= 175
°C
Single Pulse
1
10
10
2
1
ms
V
DS
90
%
10
ms
10
3
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.1
91033_08
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 8 - Maximum Safe Operating Area
Fig. 10b - Switching Time Waveforms
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
5
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