IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
34
6.5
16
Single
250
0.435
FEATURES
•
•
•
•
•
•
•
•
Advanced Process Technology
Dynamic dV/dt Rating
175 °C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
I
2
PAK (TO-262)
TO-220
D
S
G
D
G
D
2
PAK (TO-263)
S
N-Channel
MOSFET
G D
S
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL/SiHF634NL) is
available for low-profile application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRF634NPbF
SiHF634N-E3
IRF634N
SiHF634N
D
2
PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
SiHF634NS
D
2
PAK (TO-263)
IRF634NSTRLPbF
a
SiHF634NSTL-E3
a
IRF634NSTRL
a
SiHF634NSTL
a
D
2
PAK (TO-263)
IRF634NSTRRPbF
a
SiHF634NSTR-E3
a
IRF634NSTRR
a
SiHF634NSTR
a
I
2
PAK (TO-262)
IRF634NLPbF
SiHF634NL-E3
-
-
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Avalanche Current
a
Repetiitive Avalanche
Energy
a
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
1
E
AS
I
AR
E
AR
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
250
± 20
8.0
5.6
32
0.59
110
4.8
8.8
W/°C
mJ
A
mJ
A
UNIT
V
WORK-IN-PROGRESS
VISHAY [ VISHAY TELEFUNKEN ]
