IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Dynamic
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
L
D
L
S
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
4.5
7.5
-
nH
-
-
S
-
-
-
-
-
-
-
-
130
650
8.0
A
32
1.3
200
980
V
ns
nC
G
S
T
J
= 25 °C, I
S
= 4.8 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4.8 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2
V
GS
Top
10
2
I
D
, Drain-to-Source Current (A)
15
V
10
V
8.0 V
7.0
V
10
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
I
D
, Drain-to-Source Current (A)
10
1
4.5
V
0.1
20
µs
Pulse
Width
T
C
=
25 °C
1
10
10
2
V
GS
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
Top
4.5
V
1
10
-2
0.1
91033_01
0.1
0.1
91033_02
20
µs
Pulse
Width
T
C
=
175 °C
1
10
10
2
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
DS,
Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
Document Number: 91033
S-Pending-Rev. A, 19-Jun-08
www.vishay.com
3
VISHAY [ VISHAY TELEFUNKEN ]
