V23990-P868-F49/F48-PM
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness50um
= 0,61 W/mK
15
960
15
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgon=32
Rgoff=32
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
VCE=VGE
15
0
20
1200
0
0,0005
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
1,84
2,23
6,5
2,3
5
200
none
86
84
17,8
23,6
201
264
81
130
0,95
1,40
0,83
1,37
900
80
55
93
nC
pF
V
V
µA
nA
ns
±15
600
15
mWs
Thermal resistance chip to heatsink per chip
1,47
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
E
rec
R
thJH
Thermal grease
thickness50um
= 0,61 W/mK
Rgon=32
±15
600
15
15
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=150°C
1,84
1,77
14,8
16,2
289
447
1,54
2,68
92
59
1,08
2,13
2,4
V
Α
ns
μC
A/μs
mWs
K/W
Thermistor
Rated resistance
Deviation of R100
Power dissipation
B-value
R
25
ΔR/R
P
B
(25/100)
Tol. ±3%
Tol. ±5%
R100=1486
Tj=25°C
Tj=100°C
Tj=25°C
Tj=25°C
20,9
22
2,9
210
4000
23,1
k
%/K
mW
K
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