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V23990-P868-F49-PM 参数 Datasheet PDF下载

V23990-P868-F49-PM图片预览
型号: V23990-P868-F49-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 809 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P868-F49/F48-PM  
preliminary datasheet  
Output Inverter  
Figure 13  
Output inverter FRED  
Figure 14  
Output inverter FRED  
Typical reverse recovery charge as a  
function of collector current  
Qrr = f(IC)  
Typical reverse recovery charge as a  
function of IGBT turn on gate resistor  
Qrr = f(Rgon  
)
4
3,2  
2,4  
1,6  
0,8  
0
4
Qrr  
3,2  
2,4  
1,6  
0,8  
Qrr  
Qrr  
Qrr  
0
0
R
( Ω)  
150  
I C (A)  
0
5
10  
15  
20  
25  
30  
30  
60  
90  
120  
gon  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
15  
°C  
25/150  
600  
15  
°C  
V
A
=
=
=
V
V
Rgon  
VGE =  
32  
15  
V
Figure 15  
Output inverter FRED  
Figure 16  
Output inverter FRED  
Typical reverse recovery current as a  
function of collector current  
Typical reverse recovery current as a  
function of IGBT turn on gate resistor  
IRRM = f(IC)  
IRRM = f(Rgon)  
20  
16  
12  
8
48  
40  
32  
24  
16  
8
IRRM  
IRRM  
IRRM  
4
IRRM  
0
0
0
R
( Ω )  
I C (A)  
0
5
10  
15  
20  
25  
30  
30  
60  
90  
120  
150  
gon  
Tj =  
VCE  
VGE  
Tj =  
VR =  
IF =  
25/150  
600  
15  
°C  
V
V
25/150  
600  
15  
°C  
V
A
=
=
Rgon  
=
VGE =  
32  
15  
V
copyright Vincotech  
7
Revision: 1