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V23990-P868-F49-PM 参数 Datasheet PDF下载

V23990-P868-F49-PM图片预览
型号: V23990-P868-F49-PM
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 809 K
品牌: VINCOTECH [ VINCOTECH ]
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V23990-P868-F49/F48-PM
preliminary datasheet
flowPACK 0 3rd gen
Features
2 clip housing in 12mm and 17mm height
Trench Fieldstop IGBT
4
technology
Compact and low inductance design
Built-in NTC
1200V/15A
flow0 housing
Target Applications
Motor Drives
Power Generation
UPS
Schematic
Types
V23990-P868-F49-PM: 17mm height
V23990-P868-F48-PM: 12mm height
Maximum Ratings
Tj=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings*
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
”150°C
V
GE
=15V
T
j
=T
jmax
t
p
limited by T
jmax
T
j
=T
jmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
22
V
A
A
W
V
s
V
°C
45
64
±20
10
800
175
* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=25°C
T
j
=T
jmax
t
p
limited by T
jmax
T
j
=T
jmax
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
1200
21
V
A
A
W
°C
30
45
175
Thermal properties
Storage temperature
Operation junction temperature
T
stg
T
op
-40…..+125
-40…..+Tjmax-25
°C
°C
copyright Vincotech
1
Revision: 1